公开(公告)号：US20040115948A1

公开(公告)日：2004-06-17

申请号：US10317039

申请日：2002-12-12

Applicant: ProMOS Technologies, Inc.

Inventor： Yung Hsien Wu ,  Jer Lee

IPC: H01L021/302

CPC classification number: H01L21/02238 ,  H01L21/022 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3143

Abstract: A method for manufacturing a semiconductor device that includes providing a first layer, cleaning the first layer, growing an oxide layer over the first layer at a reduced pressure from an atmospheric pressure, and depositing a nitride layer over the oxide layer, wherein the growing of the oxide layer and depositing of the nitride layer are performed in the same furnace.

Abstract translation: 一种制造半导体器件的方法，包括提供第一层，清洁第一层，在大气压力的减压下在第一层上生长氧化物层，以及在氧化物层上沉积氮化物层，其中生长 氧化物层和氮化物层的沉积在相同的炉中进行。