Invention Application
US20040115948A1 Method for fabricating on stack structures in a semiconductor device
审中-公开
一种用于在半导体器件中的堆叠结构上制造的方法
- Patent Title: Method for fabricating on stack structures in a semiconductor device
- Patent Title (中): 一种用于在半导体器件中的堆叠结构上制造的方法
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Application No.: US10317039Application Date: 2002-12-12
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Publication No.: US20040115948A1Publication Date: 2004-06-17
- Inventor: Yung Hsien Wu , Jer Lee
- Applicant: ProMOS Technologies, Inc.
- Applicant Address: null
- Assignee: ProMOS Technologies, Inc.
- Current Assignee: ProMOS Technologies, Inc.
- Current Assignee Address: null
- Main IPC: H01L021/302
- IPC: H01L021/302
Abstract:
A method for manufacturing a semiconductor device that includes providing a first layer, cleaning the first layer, growing an oxide layer over the first layer at a reduced pressure from an atmospheric pressure, and depositing a nitride layer over the oxide layer, wherein the growing of the oxide layer and depositing of the nitride layer are performed in the same furnace.
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