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    RESISTIVE SWITCHING MEMORY ELEMENT INCLUDING DOPED SILICON ELECTRODE
    1.
    发明申请
    RESISTIVE SWITCHING MEMORY ELEMENT INCLUDING DOPED SILICON ELECTRODE 有权
    电阻式开关元件包括掺杂的硅电极

    公开(公告)号：US20120205610A1

    公开(公告)日：2012-08-16

    申请号：US13454392

    申请日：2012-04-24

    申请人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    发明人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

    摘要翻译： 描述了包括掺杂硅电极的电阻式开关存储元件，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特之间 eV），第一电极和第二电极之间的金属氧化物层，金属氧化物层使用体积介导的开关进行开关，并且具有大于4eV的带隙，并且存储元件从低电阻状态切换到高电阻 状态，反之亦然。

    RESISTIVE SWITCHING MEMORY ELEMENT INCLUDING DOPED SILICON ELECTRODE
    2.
    发明申请
    RESISTIVE SWITCHING MEMORY ELEMENT INCLUDING DOPED SILICON ELECTRODE 有权
    电阻式开关元件包括掺杂的硅电极

    公开(公告)号：US20100258781A1

    公开(公告)日：2010-10-14

    申请号：US12608934

    申请日：2009-10-29

    申请人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    发明人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

    摘要翻译： 描述了包括掺杂硅电极的电阻式开关存储元件，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特之间 eV），第一电极和第二电极之间的金属氧化物层，金属氧化物层使用体积介导的开关进行开关，并且具有大于4eV的带隙，并且存储元件从低电阻状态切换到高电阻 状态，反之亦然。

    Resistive switching memory element including doped silicon electrode
    3.
    发明授权
    Resistive switching memory element including doped silicon electrode 有权
    电阻式开关存储元件包括掺杂硅电极

    公开(公告)号：US08183553B2

    公开(公告)日：2012-05-22

    申请号：US12608934

    申请日：2009-10-29

    申请人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    发明人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

    摘要翻译： 描述了包括掺杂硅电极的电阻式开关存储器元件，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特之间 eV），第一电极和第二电极之间的金属氧化物层，金属氧化物层使用体积介导的开关进行开关，并且具有大于4eV的带隙，并且存储元件从低电阻状态切换到高电阻 状态，反之亦然。

    Resistive switching memory element including doped silicon electrode
    4.
    发明授权
    Resistive switching memory element including doped silicon electrode 有权
    电阻式开关存储元件包括掺杂硅电极

    公开(公告)号：US08502187B2

    公开(公告)日：2013-08-06

    申请号：US13454392

    申请日：2012-04-24

    申请人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    发明人： Prashant Phatak ,  Tony Chiang ,  Michael Miller ,  Wen Wu

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

    摘要翻译： 描述了包括掺杂硅电极的电阻式开关存储元件，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特之间 eV），第一电极和第二电极之间的金属氧化物层，金属氧化物层使用体积介导的开关进行开关，并且具有大于4eV的带隙，并且存储元件从低电阻状态切换到高电阻 状态，反之亦然。

    Polymer Foams With Treated Fillers, Fabrication Method And Products Using Same
    9.
    发明申请
    Polymer Foams With Treated Fillers, Fabrication Method And Products Using Same 有权
    具有处理填料的聚合物泡沫，使用相同的制造方法和产品

    公开(公告)号：US20070269647A1

    公开(公告)日：2007-11-22

    申请号：US11687475

    申请日：2007-03-16

    申请人： Wen Wu ,  David Dobreski

    发明人： Wen Wu ,  David Dobreski

    IPC分类号： B32B5/22 ,  B29C44/04 ,  C08J9/00

    CPC分类号： C08J9/0066 ,  Y10T428/249981 ,  Y10T428/249986 ,  Y10T428/249988 ,  Y10T428/249991 ,  Y10T428/249992 ,  Y10T428/249993

    摘要： The present invention provides for a polymer composite foam with a treated filler and methods for making the same. The polymer composite foam includes a polymer capable of being formed into a polymeric foam and a treated filler, wherein the polymer defines a plurality of cells dispersed therethrough and the treated filler is dispersed throughout the polymer. The filler is treated by techniques which exfoliate, delaminate or intercalate the filler particles into individual micro and/or nano size particulates and platelets. Ideally, the treated filler has a median particle size ranging from about 0.1 nm-10 μm. The treated filler enhances the rigidity, barrier properties, heat deflection temperature, nucleation characteristics, fire retardant characteristics and impact properties of the foam. The products fabricated from the polymer composite foam include containers, cups, sleeves, bags, plates, bowls, protective packaging, boards, sheets, void fillers, storageware, dinnerware and cookware. The present invention also provides for methods of fabricating the polymer composite foam.

    摘要翻译： 本发明提供一种具有处理填料的聚合物复合泡沫体及其制备方法。 聚合物复合泡沫体包括能够形成聚合物泡沫和经处理的填料的聚合物，其中聚合物限定了分散在其中的多个细胞，并且处理的填料分散在整个聚合物中。 填料通过将填料颗粒剥离，分层或嵌入到单独的微粒和/或纳米尺寸颗粒和血小板中的技术来处理。 理想地，处理过的填料的中值粒度为约0.1nm-10μm。 经处理的填料增强了泡沫的刚性，阻隔性能，热变形温度，成核特性，阻燃特性和冲击性能。 由聚合物复合泡沫制成的产品包括容器，杯子，袖子，袋子，盘子，碗，保护性包装，板，片，空隙填料，储存器皿，餐具和炊具。 本发明还提供了制造聚合物复合泡沫体的方法。

    Lens measuring method and device for determining decenter and tilt of the lens
    10.
    发明申请
    Lens measuring method and device for determining decenter and tilt of the lens 失效
    用于确定透镜的倾斜和倾斜的透镜测量方法和装置

    公开(公告)号：US20070201037A1

    公开(公告)日：2007-08-30

    申请号：US11513601

    申请日：2006-08-31

    申请人： Wen Wu ,  Kuo-Cheng Huang ,  Chien-Shing Lee ,  Jung-Ru Yu

    发明人： Wen Wu ,  Kuo-Cheng Huang ,  Chien-Shing Lee ,  Jung-Ru Yu

    IPC分类号： G01B11/02

    CPC分类号： G01B11/272

    摘要： A device for measuring a lens, comprising a first interferometer having a first optical axis and carried on a first adjustment base, a lens holder for holding the lens having a first surface having a first lens optical axis and a second surface having a second lens optical axis, and a platen having a sliding rail and carrying the first adjustment base and the lens holder thereon, wherein the lens holder is movable on the sliding rail, wherein each of the first adjustment base and the lens holder has a tetra-axis adjustment mechanism through which a relative positional relationship of the first optical axis of the first interferometer and the first lens optical axis of the first surface of the lens is adjustable.

    摘要翻译： 一种用于测量透镜的装置，包括具有第一光轴并承载在第一调节基座上的第一干涉仪，用于保持具有第一透镜光轴的第一表面的透镜的透镜保持器和具有第二透镜光学的第二表面 以及具有滑动导轨并在其上承载第一调节基座和透镜架的压板，其中透镜保持件可在滑轨上移动，其中第一调节基座和透镜保持器中的每一个具有四轴调节机构 第一干涉仪的第一光轴与透镜的第一表面的第一透镜光轴之间的相对位置关系可调整。