公开(公告)号：US08139228B2

公开(公告)日：2012-03-20

申请号：US12779749

申请日：2010-05-13

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01B11/02 ,  G01B9/021

CPC分类号： G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N2021/1721 ,  H01L22/12

摘要： Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying of the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures, or internal surfaces of the semiconductor material or wafer under test.

摘要翻译： 用于全息或干涉半导体测试和评估的所有制造阶段的检查成像的改进方法和系统。 具体地，公开了用于扩展用于评估微电子器件的光学全息干涉测量的范围并确定电磁信号和对半导体材料的动态应力的相互作用的系统和方法，其中增强成像方法提供连续和变化的放大率 多个交错光路和成像装置上的光学全息干涉图像。 一个或多个全息干涉图案的分析显示内部和外部应力以及这些应力对被测半导体材料或晶片的特征，内部结构或内表面内的特征的操作特性的各种影响。

公开(公告)号：US20130181722A1

公开(公告)日：2013-07-18

申请号：US13786176

申请日：2013-03-05

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01R31/265

CPC分类号： G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

摘要： Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.

摘要翻译： 使用多个“实时”和存储的干涉图案或检测到的数据来确定或生成至少一个内部应力或信号的二维或三维信息或确定其影响的半导体和自由金属器件的分析和表征 内部或外部应力作用在施加到被测设备或评估设备的电信号之上或之内，其具有外表面，内部结构，电子特征以及确定与表面相邻放置的化学物质，生物电材料或物质的影响 的被测设备。

公开(公告)号：US08462350B2

公开(公告)日：2013-06-11

申请号：US13366180

申请日：2012-02-03

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01B11/02 ,  G01B9/02 ,  G01J3/45

CPC分类号： G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

摘要： Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

摘要翻译： 用于全息或干涉半导体检测和评估的改进的方法和系统，用于设备开发和制造的所有阶段。 具体地，公开了用于扩展用于测试和评估微电子器件的光学全息干涉测量的范围的系统和方法，并且确定电磁信号和对半导体材料的动态应力的相互作用，其中增强的成像方法提供连续和变化的放大率 的光学全息干涉图像在多个交错光学路径和成像装置上。 一个或多个全息干涉图案的分析显示在开发或制造的任何阶段，该特征，内部结构或半导体器件的内表面内的特征的操作特性的内部和外部应力以及这些应力的各种影响。

公开(公告)号：US08736823B2

公开(公告)日：2014-05-27

申请号：US13786176

申请日：2013-03-05

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01L1/24 ,  G01B9/02

CPC分类号： G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

摘要： Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.

摘要翻译： 使用多个“实时”和存储的干涉图案或检测到的数据来确定或生成至少一个内部应力或信号的二维或三维信息或确定其影响的半导体和自由金属器件的分析和表征 内部或外部应力作用在施加到被测设备或评估设备的电信号之上或之内，其具有外表面，内部结构，电子特征以及确定与表面相邻放置的化学物质，生物电材料或物质的影响 的被测设备。

公开(公告)号：US20120127473A1

公开(公告)日：2012-05-24

申请号：US13366180

申请日：2012-02-03

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01B9/021

CPC分类号： G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

摘要： Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

摘要翻译： 用于全息或干涉半导体检测和评估的改进的方法和系统，用于设备开发和制造的所有阶段。 具体地，公开了用于扩展用于测试和评估微电子器件的光学全息干涉测量的范围的系统和方法，并且确定电磁信号和对半导体材料的动态应力的相互作用，其中增强的成像方法提供连续和变化的放大率 的光学全息干涉图像在多个交错光学路径和成像装置上。 一个或多个全息干涉图案的分析显示在开发或制造的任何阶段，该特征，内部结构或半导体器件的内表面内的特征的操作特性的内部和外部应力以及这些应力的各种影响。

公开(公告)号：US08405823B2

公开(公告)日：2013-03-26

申请号：US13269402

申请日：2011-10-07

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01L1/24 ,  G01J5/02 ,  G01B9/021

CPC分类号： G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

摘要： An improved optical infrared and ultraviolet imaging system including a first imaging device that is sensitive to a light which creates a photocurrent or changes in electric field or stresses within the first imaging device and a second infrared imaging device that is illuminated by light incident to the first imaging device which is reflected to the second imaging device which images optical changes in phase or polarization or amplitude or birefringence within the first imaging device.

摘要翻译： 一种改进的光学红外和紫外成像系统，包括对产生光电流的光敏感的第一成像装置或第一成像装置内的电场或应力的变化以及由入射到第一成像装置的光照亮的第二红外成像装置 成像装置被反射到第二成像装置，其对第一成像装置内的相位或偏振或幅度或双折射的光学变化进行成像。

公开(公告)号：US08040521B2

公开(公告)日：2011-10-18

申请号：US12422210

申请日：2009-04-10

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01B9/02 ,  G01B9/021

CPC分类号： G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

摘要： An improved condition testing system and method integrated into microelectronic circuits includes a structure including a semiconductor material with a target portion and a second portion for determining the presence and nature of various external (e.g. magnetic field, microwave, bioelectric or incident radiation) or internal stresses (e.g. binary circuit-state or analog signal recognition) or conditions acting upon the material. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a test grating determined and shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use one or more diffraction structures, holograms, or holographic optical elements spaced apart from the circuit or electronic device under test to non-invasively optically test in parallel two or more targeted conditions having a shape, size, structure, intensity or orientation of the stress acting upon the material.

摘要翻译： 集成到微电子电路中的改进的状态测试系统和方法包括包括具有目标部分的半导体材料和用于确定各种外部（例如磁场，微波，生物电或入射辐射）或内部应力的存在和性质的第二部分的结构 （例如二进制电路状态或模拟信号识别）或作用于材料的条件。 当发生以下中的至少一个时，目标部分具有第一特征：外力由结构的第二部分接收并且在目标部分中发生内部状况。 该系统和方法还具有一个测试光栅，其被确定并定形并定位成当目标部分和光栅暴露于无创照明时以及当目标部分具有第一特征时产生第一光学干涉图案。 进一步的实施方案使用一个或多个衍射结构，全息图或全息光学元件与待测电路或电子设备间隔开，以平行的方式非侵入式地光学地测试具有形状，尺寸，结构，强度或取向的两个或多个目标条件 作用于材料的应力。

公开(公告)号：US07728958B2

公开(公告)日：2010-06-01

申请号：US11957395

申请日：2007-12-14

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01L1/24 ,  G01B9/021 ,  G01B9/02

CPC分类号： G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

摘要： An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating.

摘要翻译： 改进的状态测试系统和方法包括包括具有目标部分的半导体材料和第二部分的结构。 当发生以下中的至少一个时，目标部分具有第一特征：外力由结构的第二部分接收并且在目标部分中发生内部状况。 该系统和方法还具有光栅形状并定位成当目标部分和光栅暴露于无创照明时以及当目标部分具有第一特征时产生第一光学干涉图案。 另外的实施方式使用与第一光栅间隔开的第二光栅。

公开(公告)号：US20120133922A1

公开(公告)日：2012-05-31

申请号：US13269402

申请日：2011-10-07

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01J3/00

CPC分类号： G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

摘要： An improved optical infrared and ultraviolet imaging and testing system including a primary imaging device with a target portion and a secondary imaging device for determining the presence and nature of various external (e.g. magnetic field, microwave, bioelectric or incident infrared, thermal, ultraviolet, radiation, or x-rays) or internal stresses (e.g., photo-generated carriers or photo-induced resistance) or other conditions acting upon the primary detection device which are optically enhanced for detection by the secondary detection device or devices.

摘要翻译： 一种改进的光学红外和紫外成像和测试系统，包括具有目标部分的主要成像装置和用于确定各种外部（例如磁场，微波，生物电或入射红外线，热，紫外线，辐射）的存在和性质的二次成像装置 ，或X射线）或内部应力（例如，光生载体或光感抗性）或作用于初级检测装置的其它条件，其被光学增强以用于由次级检测装置检测。

公开(公告)号：US20110122415A1

公开(公告)日：2011-05-26

申请号：US12779749

申请日：2010-05-13

申请人： Paul L. Pfaff

发明人： Paul L. Pfaff

IPC分类号： G01B9/021

CPC分类号： G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N2021/1721 ,  H01L22/12

摘要： Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying magnification over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the feature or interior structures or internal surfaces of the semiconductor material or wafer.

摘要翻译： 用于全息或干涉半导体测试和评估的所有制造阶段的检查成像的改进方法和系统。 具体地，提供用于扩展用于评估微电子器件的光学全息干涉测量的范围以及电磁信号和动态应力相互作用到半导体材料的系统和方法，其中增强成像方法在多个交错光学 路径和成像设备。 一个或多个全息干涉图案的分析显示内部和外部应力以及这些应力对于半导体材料或晶片的特征或内部结构或内部表面内的特征的操作特性的各种影响。