公开(公告)号：US12100936B2

公开(公告)日：2024-09-24

申请号：US17767293

申请日：2020-10-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshiyuki Takizawa

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/18 ,  H01S5/327

CPC classification number: H01S5/327 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02516 ,  H01L21/02521 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/002 ,  H01L33/005 ,  H01L33/18 ,  H01L21/02488 ,  H01L21/02502

Abstract: A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.