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公开(公告)号:US20160190103A1
公开(公告)日:2016-06-30
申请号:US15062115
申请日:2016-03-06
Inventor: TATSUYA KABE , HIDEYUKI ARAI
IPC: H01L25/065 , H01L23/00 , H01L25/00
CPC classification number: H01L25/0657 , H01L21/76898 , H01L23/528 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/5329 , H01L23/562 , H01L23/564 , H01L23/58 , H01L23/585 , H01L24/06 , H01L24/09 , H01L24/14 , H01L24/17 , H01L24/83 , H01L25/065 , H01L25/07 , H01L25/18 , H01L2224/06505 , H01L2224/09505 , H01L2224/14505 , H01L2224/17505 , H01L2224/29186 , H01L2224/2919 , H01L2224/29191 , H01L2224/83895 , H01L2225/06558 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor devise includes a first substrate and a second substrate which are bonded each other. A first substrate includes an insulating first surface film as an uppermost layer, a first electrode and an insulating second surface film respectively formed inside a plurality of openings in the first surface film, and a first seal ring. A second substrate includes an insulating third surface film as an uppermost layer, and a second electrode, an insulating fourth surface film respectively formed inside a plurality of openings in the third surface film, and a second seal ring. The first electrode and the second electrode are directly bonded together. The first surface film and the third surface film are directly bonded together. The second surface film and the fourth surface film are directly bonded together. A seal ring formed of the first seal ring, the second surface film, the fourth surface film, and the second seal ring is continuous between the first substrate and the second substrate.
Abstract translation: 半导体器件包括彼此接合的第一衬底和第二衬底。 第一基板包括作为最上层的绝缘的第一表面膜,分别形成在第一表面膜中的多个开口内的第一电极和绝缘的第二表面膜,以及第一密封环。 第二基板包括作为最上层的绝缘的第三表面膜,以及分别形成在第三表面膜中的多个开口内的绝缘的第四表面膜和第二密封环的第二电极。 第一电极和第二电极直接接合在一起。 第一表面膜和第三表面膜直接接合在一起。 第二表面膜和第四表面膜直接接合在一起。 由第一密封环,第二表面膜,第四表面膜和第二密封环形成的密封环在第一基板和第二基板之间是连续的。