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公开(公告)号:US10484794B2
公开(公告)日:2019-11-19
申请号:US16031496
申请日:2018-07-10
Inventor: Tetsushi Itano , Seiji Takagi , Kenji Endou , Kazuaki Nishimura , Makoto Kurozawa
IPC: H04R7/12 , H04R31/00 , B29C45/00 , B29C45/56 , B29K23/00 , B29K309/10 , B29K509/08 , B29L31/38
Abstract: A loudspeaker diaphragm includes resin and hollow glass member particles contained in the resin. Further, a loudspeaker includes the above-described loudspeaker diaphragm, a magnetic circuit, a frame connected to the magnetic circuit, and a voice coil body having one end connected to the loudspeaker diaphragm and the other end disposed inside a magnetic gap in the magnetic circuit.
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公开(公告)号:US10247883B2
公开(公告)日:2019-04-02
申请号:US15749525
申请日:2016-08-23
Inventor: Naoyuki Kondou , Shinji Hashimoto , Toru Nakashiba , Shingo Maeda , Seiji Takagi
Abstract: A composition for an optical waveguide is cured into a sheet to give a cured product. A difference in light transmittance with respect to light having a wavelength of 450 nm is 15% or less between this cured product and this cured product after retention in atmosphere at 175° C. for 40 hours, the light transmittance being calculated in terms of the cured product at a thickness of 50 μm.
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公开(公告)号:US10393963B2
公开(公告)日:2019-08-27
申请号:US16273925
申请日:2019-02-12
Inventor: Naoyuki Kondou , Shinji Hashimoto , Toru Nakashiba , Shingo Maeda , Seiji Takagi
Abstract: A composition for an optical waveguide is cured into a sheet to give a cured product. A difference in light transmittance with respect to light having a wavelength of 450 nm is 15% or less between this cured product and this cured product after retention in atmosphere at 175° C. for 40 hours, the light transmittance being calculated in terms of the cured product at a thickness of 50 μm.
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公开(公告)号:US11723224B2
公开(公告)日:2023-08-08
申请号:US17231614
申请日:2021-04-15
Inventor: Tatsunori Momose , Hiroaki Iijima , Masumi Izuchi , Seiji Takagi
CPC classification number: H10K39/32 , H10K30/10 , H10K30/211 , H10K30/353 , H10K85/211 , H10K85/311 , H10K85/6572
Abstract: An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.
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