公开(公告)号：US20240186976A1

公开(公告)日：2024-06-06

申请号：US18061252

申请日：2022-12-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Amir RAHAFROOZ ,  Diego EMILIO SERRANO ,  Thomas Kieran NUNAN ,  Ijaz JAFRI

IPC: H03H9/02 ,  H03H9/24

CPC classification number: H03H9/02433 ,  H03H9/2405 ,  H03H2009/0244 ,  H03H2009/2442

Abstract: A mechanical resonator includes two identical plates, and a decoupling structure comprising at least two first connectors, each first connector connecting the decoupling structure to a respective one of the two identical plates, and an anchor disposed at a center of the decoupling structure. Each of the two identical plates may be a square plate adapted to resonate in Lamé-mode. Further, each of the two identical plates may comprise a plurality of square plates, each square plate disposed next to one another. The decoupling structure further comprises a first ring connected to each of the two identical plates via a respective one of the at least two first connectors. The decoupling structure may further comprise a second ring connected to an inside of the first ring via at least two second connectors, wherein the anchor is disposed at a center of the second ring.

公开(公告)号：US20210229978A1

公开(公告)日：2021-07-29

申请号：US16751567

申请日：2020-01-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Amir RAHAFROOZ ,  Thomas Kieran NUNAN ,  Diego EMILIO SERRANO ,  Ijaz JAFRI

IPC: B81B3/00 ,  B81C1/00

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.

公开(公告)号：US20250116517A1

公开(公告)日：2025-04-10

申请号：US18482403

申请日：2023-10-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Amir RAHAFROOZ ,  Diego EMILIO SERRANO ,  Ijaz JAFRI

IPC: G01C19/5677

Abstract: A gyroscope includes a vibratory plate with at least one notch, wherein each notch is a positive notch that is a formed by adding a mass to the vibratory plate, or a negative notch that is formed by removing a mass from the vibratory plate, and an anchor configured to support the vibratory plate. Across the wafer, a gyro design with a few different notch sizes can be designed to counteract the quadrature pattern. Depending on the type and magnitude of imperfection, a notch size and its location can be determined. The locations to add or remove a mass on the disk may be identified as follows. The locations where one gyro mode has a larger displacement while the second gyro mode has no displacement or a smaller displacement can be used to substantially impact the frequency of one of the first resonance mode or the second resonance mode. Alternatively, the locations where both gyro modes have the substantially same displacement amplitude can be used to impact the coupling between the two modes.

公开(公告)号：US20240077312A1

公开(公告)日：2024-03-07

申请号：US17930173

申请日：2022-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Diego EMILIO SERRANO ,  Sagnik PAL ,  Amir RAHAFROOZ ,  Thomas Kieran NUNAN ,  Ijaz JAFRI

IPC: G01C19/5698

CPC classification number: G01C19/5698

Abstract: Systems and methods disclosed herein include a device with a bulk acoustic wave resonator and one or more trenches that are configured to impede the flow of acoustic energy to the bulk acoustic wave resonator.