公开(公告)号：US20220302259A1

公开(公告)日：2022-09-22

申请号：US17637352

申请日：2020-08-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroto YAMAGIWA ,  Manabu YANAGIHARA ,  Takahiro SATO ,  Masahiro HIKITA ,  Hiroaki UENO ,  Yusuke KINOSHITA

IPC: H01L29/08 ,  H01L29/20 ,  H01L29/778 ,  H01L29/10

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer above the first nitride semiconductor layer and being greater than the first nitride semiconductor layer in band gap; and a first field-effect transistor including a first source electrode, a first drain electrode, and a first gate electrode that are above the second nitride semiconductor layer, the first source electrode and the first drain electrode being separated from each other, the first gate electrode being disposed between the first source electrode and the first drain electrode. The first field-effect transistor includes a third semiconductor layer that is above the second nitride semiconductor layer in part of a region between lower part of the first source electrode and the first gate electrode, and is separated from the first gate electrode. The third semiconductor layer and the first source electrode are electrically connected.

公开(公告)号：US20200044066A1

公开(公告)日：2020-02-06

申请号：US16498366

申请日：2018-03-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Asamira SUZUKI ,  Hiroaki UENO ,  Hidetoshi ISHIDA

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/04

Abstract: A semiconductor device includes a substrate, a semiconductor portion, a first electrode, and a second electrode. The substrate has a first surface and a second surface located opposite from each other in a thickness direction defined for the substrate. The semiconductor portion is provided on the first surface of the substrate. The semiconductor portion includes a heterojunction defining a junction between a first compound semiconductor portion and a second compound semiconductor portion and intersecting with a first direction defined along the first surface of the substrate. The first electrode and the second electrode are arranged on a first end surface of the semiconductor portion and on a second end surface of the semiconductor portion, respectively, in a second direction defined along the first surface of the substrate and aligned with a direction in which the heterojunction extends. The first electrode and the second electrode are electrically connected to the heterojunction.

公开(公告)号：US20200044068A1

公开(公告)日：2020-02-06

申请号：US16499149

申请日：2018-03-26

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hiroaki UENO ,  Asamira SUZUKI ,  Hidetoshi ISHIDA

IPC: H01L29/778 ,  H01L29/43 ,  H01L29/20

Abstract: A semiconductor portion thereof includes a heterojunction defining a junction between a first compound semiconductor portion and a second compound semiconductor portion having a greater bandgap than the first compound semiconductor portion. The heterojunction intersects with a second direction defined along a first surface of a substrate. A first electrode is arranged opposite from the substrate with respect to the semiconductor portion. A second electrode is arranged on a second surface of the substrate. A gate electrode intersects with the second direction between the first electrode and the second electrode and faces the second compound semiconductor portion. A gate layer is interposed in the second direction between the gate electrode and the second compound semiconductor portion and forms a depletion layer in the second compound semiconductor portion and the first compound semiconductor portion.

公开(公告)号：US20210134963A1

公开(公告)日：2021-05-06

申请号：US17256475

申请日：2019-06-12

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Masanori NOMURA ,  Hiroaki UENO ,  Yusuke KINOSHITA ,  Yasuhiro YAMADA ,  Hidetoshi ISHIDA

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/808 ,  H01L29/43

Abstract: A bidirectional switch element includes: a substrate; an AlzGa1-zN layer; an AlbGa1-bN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type Alx1Ga1-x1N layer; a p-type Alx2Ga1-x2N layer; an AlyGa1-yN layer; and an AlwGa1-wN layer. The AlzGa1-zN layer is formed over the substrate. The AlbGa1-bN layer is formed on the AlzGa1-zN layer. The AlyGa1-yN layer is interposed between the substrate and the AlzGa1-zN layer. The AlwGa1-wN layer is interposed between the substrate and the AlyGa1-yN layer and has a higher C concentration than the AlyGa1-yN layer.