公开(公告)号：US20210317596A1

公开(公告)日：2021-10-14

申请号：US17102948

申请日：2020-11-24

Applicant: POSTECH Research and Business Development Foundation

Inventor： Junwoo SON ,  Yunkyu PARK ,  Jinheon PARK

IPC: C30B23/02 ,  H01L29/12 ,  H01L21/02 ,  C30B23/06 ,  C30B29/32

Abstract: A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).

公开(公告)号：US20220416083A1

公开(公告)日：2022-12-29

申请号：US17844873

申请日：2022-06-21

Applicant: POSTECH Research and Business Development Foundation

Inventor： Junwoo SON ,  Yunkyu PARK ,  DongKyu LEE ,  Si-Young CHOI ,  Hyeji SIM

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L21/02

Abstract: Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.