公开(公告)号：US20220416083A1

公开(公告)日：2022-12-29

申请号：US17844873

申请日：2022-06-21

Applicant: POSTECH Research and Business Development Foundation

Inventor： Junwoo SON ,  Yunkyu PARK ,  DongKyu LEE ,  Si-Young CHOI ,  Hyeji SIM

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L21/02

Abstract: Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.