公开(公告)号：US20210317596A1

公开(公告)日：2021-10-14

申请号：US17102948

申请日：2020-11-24

Applicant: POSTECH Research and Business Development Foundation

Inventor： Junwoo SON ,  Yunkyu PARK ,  Jinheon PARK

IPC: C30B23/02 ,  H01L29/12 ,  H01L21/02 ,  C30B23/06 ,  C30B29/32

Abstract: A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).