Abstract:
A data reading method, a memory storage device and a memory controlling circuit unit are provided. The method includes: receiving a first read command; setting a plurality of first read events in a multi trigger queue (MTQ) according to the first read command, wherein the first read events include a general read event and at least one cache read event; sending a first read command sequence according to at least one of the first read events and receiving first data from a rewritable non-volatile memory module; and if a decoding for the first data fails, resetting the MTQ, and sending at least one second read command sequence according to at least one second read event in the reset MTQ, wherein the at least one second read event includes at least one of the at least one cache reading event.
Abstract:
A data reading method, a memory storage device and a memory controlling circuit unit are provided. The method includes: receiving a first read command; setting a plurality of first read events in a multi trigger queue (MTQ) according to the first read command, wherein the first read events include a general read event and at least one cache read event; sending a first read command sequence according to at least one of the first read events and receiving first data from a rewritable non-volatile memory module; and if a decoding for the first data fails, resetting the MTQ, and sending at least one second read command sequence according to at least one second read event in the reset MTQ, wherein the at least one second read event includes at least one of the at least one cache reading event.