公开(公告)号：US20160099062A1

公开(公告)日：2016-04-07

申请号：US14556255

申请日：2014-12-01

Applicant: PHISON ELECTRONICS CORP.

Inventor： Hong-Lipp Ko ,  Kheng-Joo Tan ,  Teng-Chun Hsu ,  Chia-Hung Chien

IPC: G11C16/14

CPC classification number: G11C16/14 ,  G11C16/10

Abstract: A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: writing data into at least one first logical unit and at least one second logical unit, and the data includes first data and second data; storing first data into at least one first physical erasing unit and filling the first physical erasing unit with the first data; storing second data into at least one second physical erasing unit; determining whether a remaining space of each second physical erasing unit is less than a threshold; if the remaining space of one of the at least one second physical erasing unit is less than the threshold, selecting at least one fourth physical erasing unit from a spare area and writing the second data into the at least one second physical erasing unit and the at least one fourth physical erasing unit.

Abstract translation: 提供数据写入方法，存储器存储装置和存储器控制电路单元。 该方法包括：将数据写入至少一个第一逻辑单元和至少一个第二逻辑单元，并且该数据包括第一数据和第二数据; 将第一数据存储到至少一个第一物理擦除单元中，并用第一数据填充第一物理擦除单元; 将第二数据存储到至少一个第二物理擦除单元中; 确定每个第二物理擦除单元的剩余空间是否小于阈值; 如果所述至少一个第二物理擦除单元之一的剩余空间小于所述阈值，则从备用区域选择至少一个第四物理擦除单元，并将所述第二数据写入所述至少一个第二物理擦除单元，并且所述第二物理擦除单元 至少四分之一的物理擦除单元。

公开(公告)号：US20220413763A1

公开(公告)日：2022-12-29

申请号：US17380002

申请日：2021-07-19

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chia-Hung Chien ,  Yi-Cheng Wu ,  Chia-Hsiang Cheng

IPC: G06F3/06 ,  G06F12/02

Abstract: A mapping information management method, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a write command instructing storing of first data from a host system; storing the first data to a rewritable non-volatile memory module according to the write command; updating mapping information corresponding to the storing of the first data; storing the mapping information to the rewritable non-volatile memory module; generating assistant information according to first part information of the mapping information, where the assistant information is not stored into the rewritable non-volatile memory module; and transmitting second part information of the mapping information and the assistant information to the host system to provide information related to the storing of the first data.

公开(公告)号：US20200272358A1

公开(公告)日：2020-08-27

申请号：US16380973

申请日：2019-04-10

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chia-Hung Chien ,  Hsiao-Hsuan Yen

IPC: G06F3/06 ,  G06F11/10 ,  G11C29/52

Abstract: A data writing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a plurality of data from a host system, and writing the data into a plurality of first physical programming units; performing a multi-frame encoding according to the plurality of data to generate encoded data, and writing the encoded data into a second physical programming unit; and writing a plurality of first concatenated information related to the encoded data into the plurality of first programming units, respectively.

公开(公告)号：US10922019B2

公开(公告)日：2021-02-16

申请号：US16380973

申请日：2019-04-10

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chia-Hung Chien ,  Hsiao-Hsuan Yen

IPC: G11C7/00 ,  G06F3/06 ,  G11C29/52 ,  G06F11/10

Abstract: A data writing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a plurality of data from a host system, and writing the data into a plurality of first physical programming units; performing a multi-frame encoding according to the plurality of data to generate encoded data, and writing the encoded data into a second physical programming unit; and writing a plurality of first concatenated information related to the encoded data into the plurality of first programming units, respectively.

公开(公告)号：US09312011B1

公开(公告)日：2016-04-12

申请号：US14556255

申请日：2014-12-01

Applicant: PHISON ELECTRONICS CORP.

Inventor： Hong-Lipp Ko ,  Kheng-Joo Tan ,  Teng-Chun Hsu ,  Chia-Hung Chien

IPC: G11C16/14

CPC classification number: G11C16/14 ,  G11C16/10

Abstract: A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: writing data into at least one first logical unit and at least one second logical unit, and the data includes first data and second data; storing first data into at least one first physical erasing unit and filling the first physical erasing unit with the first data; storing second data into at least one second physical erasing unit; determining whether a remaining space of each second physical erasing unit is less than a threshold; if the remaining space of one of the at least one second physical erasing unit is less than the threshold, selecting at least one fourth physical erasing unit from a spare area and writing the second data into the at least one second physical erasing unit and the at least one fourth physical erasing unit.

Abstract translation: 提供数据写入方法，存储器存储装置和存储器控制电路单元。 该方法包括：将数据写入至少一个第一逻辑单元和至少一个第二逻辑单元，并且该数据包括第一数据和第二数据; 将第一数据存储到至少一个第一物理擦除单元中，并用第一数据填充第一物理擦除单元; 将第二数据存储到至少一个第二物理擦除单元中; 确定每个第二物理擦除单元的剩余空间是否小于阈值; 如果所述至少一个第二物理擦除单元之一的剩余空间小于所述阈值，则从备用区域选择至少一个第四物理擦除单元，并将所述第二数据写入所述至少一个第二物理擦除单元，并且所述第二物理擦除单元 至少四分之一的物理擦除单元。