公开(公告)号：US20140089566A1

公开(公告)日：2014-03-27

申请号：US13670480

申请日：2012-11-07

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chao-Han Wu ,  Kim-Hon Wong ,  Kheng-Chong Tan

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7205

Abstract: A data storing method and a memory controller and a memory storage apparatus using the same are provided. The method includes logically grouping physical erase units into a data area and a spare area; selecting a physical erase unit form the spare area as a first data collecting unit; and selecting a physical erase unit from the spare area as a second data collecting unit. The method also includes writing data received from a host into the first data collecting unit. The method further includes performing a data arranging operation to move valid data in a third physical erase unit to the second data collecting unit and associating the third physical erase unit with the spare area. Accordingly, the method can effectively enhance the performance of the write operation.

Abstract translation: 提供了数据存储方法和存储器控制器以及使用其的存储器存储装置。 该方法包括将物理擦除单元逻辑地分组成数据区和备用区; 从所述备用区选择物理擦除单元作为第一数据采集单元; 以及从备用区域选择物理擦除单元作为第二数据收集单元。 该方法还包括将从主机接收的数据写入第一数据收集单元。 该方法还包括执行数据排列操作以将第三物理擦除单元中的有效数据移动到第二数据收集单元，并将第三物理擦除单元与备用区域相关联。 因此，该方法可以有效地提高写入操作的性能。

公开(公告)号：US10747471B2

公开(公告)日：2020-08-18

申请号：US16005705

申请日：2018-06-12

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chao-Han Wu

IPC: G06F12/00 ,  G06F3/06 ,  G11C16/10 ,  G11C16/34 ,  G06F13/00 ,  G06F13/28 ,  G11C11/56 ,  G11C16/04

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: determining whether to use a first programming mode or a second programming mode to program memory cells according to a first data amount and a second data amount; when the first data amount is greater than the second data amount, programming the memory cells by using the first programming mode; and when the first data amount is not greater than the second data amount, programming the memory cells by using the second programming mode.

公开(公告)号：US20190332320A1

公开(公告)日：2019-10-31

申请号：US16005705

申请日：2018-06-12

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chao-Han Wu

IPC: G06F3/06 ,  G11C16/10 ,  G11C16/34

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: determining whether to use a first programming mode or a second programming mode to program memory cells according to a first data amount and a second data amount; when the first data amount is greater than the second data amount, programming the memory cells by using the first programming mode; and when the first data amount is not greater than the second data amount, programming the memory cells by using the second programming mode.