公开(公告)号：US20170117403A1

公开(公告)日：2017-04-27

申请号：US15399443

申请日：2017-01-05

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hideyuki OKITA ,  Masahiro HIKITA ,  Hisayoshi MATSUO ,  Yasuhiro UEMOTO

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L29/0642 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/42316 ,  H01L29/42356 ,  H01L29/66462 ,  H01L29/7786

Abstract: A nitride semiconductor device including a substrate, a channel layer, a carbon-poor barrier layer having a recess, a carbon-rich barrier layer disposed over the recess and the carbon-poor barrier layer, and a gate electrode above the recess, wherein the carbon-poor and carbon-rich barrier layers have bandgaps larger than that of the channel layer, the upper surface of the carbon-rich barrier layer includes a first main surface including a source electrode and a drain electrode, and a bottom surface of a depression disposed along the recess, and side surfaces of the depression connecting the first main surface to the bottom surface of the depression, and among edges of the depression of the carbon-rich barrier layer which are boundaries between the first main surface and the side surfaces of the depression, the edge of the depression of the carbon-rich barrier layer closest to the drain electrode is covered with the gate electrode.

公开(公告)号：US20240112909A1

公开(公告)日：2024-04-04

申请号：US18264202

申请日：2022-01-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hisayoshi MATSUO ,  Hideyuki OKITA ,  Masahiro HIKITA ,  Yasuhiro UEMOTO ,  Manabu YANAGIHARA

IPC: H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L21/02505 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786

Abstract: A nitride semiconductor epitaxial substrate includes: a Si substrate; a nitride semiconductor epitaxial layer disposed above the Si substrate; and a mixed crystal layer disposed between the Si substrate and the nitride semiconductor epitaxial layer, and containing Si and a group III metal element, the mixed crystal layer containing a high concentration of C. The mixed crystal layer has a concentration of at least 1.0×10+21 cm−3, and a transition metal element concentration of at most 5.0×10+16 cm−3.