公开(公告)号：US20130056801A1

公开(公告)日：2013-03-07

申请号：US13659386

申请日：2012-10-24

申请人： PANASONIC CORPORATION

发明人： Tomohiro MATSUNAGA ,  Tsuneichiro SANO

IPC分类号： H01L29/808 ,  H01L27/098

CPC分类号： H01L29/808 ,  H01L29/0696 ,  H01L29/66901 ,  H03F3/1935 ,  H03F3/45381 ,  H03F3/50

摘要： A junction field effect transistor comprising: a semiconductor substrate having a first conductivity type; a channel region having a second conductivity type different from the first conductivity type, and being formed in a surface of the semiconductor substrate; a first buried region having the second conductivity type, being formed within the channel region, and having an impurity concentration higher than the channel region; a first gate region having the first conductivity type, and being formed in a surface of the channel region; and first drain/source region and a second drain/source region both having the second conductivity type, which are formed each on an opposite side of the first gate region in the surface of the channel region, in which the first buried region is not formed below the second drain/source region, but is formed below the first drain/source region.

摘要翻译： 一种结型场效应晶体管，包括：具有第一导电类型的半导体衬底; 具有不同于第一导电类型的第二导电类型的沟道区，并形成在半导体衬底的表面中; 具有第二导电类型的第一掩埋区，形成在沟道区内，杂质浓度高于沟道区; 具有第一导电类型的第一栅极区，并形成在沟道区的表面中; 以及第一漏极/源极区域和第二漏极/源极区域，其具有第二导电类型，其在沟道区域的表面中的第一栅极区域的相对侧上形成，其中不形成第一掩埋区域 但是形成在第一漏极/源极区域的下方。