发明申请
- 专利标题： JUNCTION FIELD EFFECT TRANSISTOR AND ANALOG CIRCUIT
- 专利标题（中）： 连接场效应晶体管和模拟电路
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申请号： US13659386申请日： 2012-10-24
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公开(公告)号： US20130056801A1公开(公告)日： 2013-03-07
- 发明人: Tomohiro MATSUNAGA , Tsuneichiro SANO
- 申请人： PANASONIC CORPORATION
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2010-113706 20100517
- 主分类号： H01L29/808
- IPC分类号： H01L29/808 ; H01L27/098
摘要：
A junction field effect transistor comprising: a semiconductor substrate having a first conductivity type; a channel region having a second conductivity type different from the first conductivity type, and being formed in a surface of the semiconductor substrate; a first buried region having the second conductivity type, being formed within the channel region, and having an impurity concentration higher than the channel region; a first gate region having the first conductivity type, and being formed in a surface of the channel region; and first drain/source region and a second drain/source region both having the second conductivity type, which are formed each on an opposite side of the first gate region in the surface of the channel region, in which the first buried region is not formed below the second drain/source region, but is formed below the first drain/source region.
公开/授权文献
- US09269830B2 Junction field effect transistor and analog circuit 公开/授权日：2016-02-23
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