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公开(公告)号：US20190189871A1
公开(公告)日：2019-06-20
申请号：US16193308
申请日：2018-11-16
发明人： Peter Nagel , Klaus Reingruber
摘要： A method of producing a lighting device includes a radiation-emitting optoelectronic component, including: arranging the component on a carrier, applying a first layer on the carrier, wherein the first layer surrounds the component at least laterally in the form of a circumferential frame, and subsequently applying a second layer on the first layer laterally next to the frame, wherein the second layer includes a greater hardness than the first layer.
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公开(公告)号：US10937932B2
公开(公告)日：2021-03-02
申请号：US16286100
申请日：2019-02-26
发明人： Peter Nagel , Klaus Reingruber , Simone Brantl , Konrad Wagner , Ralf Müller
摘要： An optoelectronic component includes a carrier, an optoelectronic arrangement, and a potting material, wherein the optoelectronic arrangement includes an optoelectronic semiconductor chip, the optoelectronic arrangement is arranged above a top side of the carrier, the potting material is arranged above the top side of the carrier such that the optoelectronic arrangement is embedded into the potting material, a radiation emission face of the optoelectronic arrangement is not covered by the potting material, and a surface of the potting material is formed above the radiation emission face in relation to the top side of the carrier.
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公开(公告)号：US20190267519A1
公开(公告)日：2019-08-29
申请号：US16286100
申请日：2019-02-26
发明人： Peter Nagel , Klaus Reingruber , Simone Brantl , Konrad Wagner , Ralf Müller
摘要： An optoelectronic component includes a carrier, an optoelectronic arrangement, and a potting material, wherein the optoelectronic arrangement includes an optoelectronic semiconductor chip, the optoelectronic arrangement is arranged above a top side of the carrier, the potting material is arranged above the top side of the carrier such that the optoelectronic arrangement is embedded into the potting material, a radiation emission face of the optoelectronic arrangement is not covered by the potting material, and a surface of the potting material is formed above the radiation emission face in relation to the top side of the carrier.
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