公开(公告)号：US11961820B2

公开(公告)日：2024-04-16

申请号：US16768208

申请日：2019-02-05

申请人： OSRAM OLED GmbH

发明人： Simeon Katz ,  Mathias Wendt ,  Sophia Huppmann ,  Marcus Zenger ,  Jens Mueller

IPC分类号： H01L23/00 ,  H01L33/62

CPC分类号： H01L24/89 ,  H01L24/05 ,  H01L24/08 ,  H01L33/62 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/08111 ,  H01L2224/08146 ,  H01L2224/08502 ,  H01L2224/80805 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/12041 ,  H01L2933/0066

摘要： A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

公开(公告)号：US11289534B2

公开(公告)日：2022-03-29

申请号：US16316166

申请日：2017-05-26

申请人： OSRAM OLED GmbH

发明人： Marika Hirmer ,  Sophia Huppmann ,  Simeon Katz

IPC分类号： H01L33/22 ,  H01L27/15 ,  H01L33/00 ,  H01L33/42 ,  H01L33/46

摘要： A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively reflective mirror structure.

公开(公告)号：US10804433B2

公开(公告)日：2020-10-13

申请号：US16256897

申请日：2019-01-24

申请人： OSRAM OLED GmbH

发明人： Alexander F. Pfeuffer ,  Sophia Huppmann ,  Andrea Winnerl ,  Jens Müller

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/22 ,  H01L27/15 ,  H01L33/00

摘要： An optoelectronic device and a method are disclosed. In an embodiment an optoelectronic device includes a semiconductor body having a layer sequence with an active region configured to generate radiation, a first dielectric layer arranged on the layer sequence having a plurality of first areas and a second area, a first contact via in each area of the plurality of first areas for contacting a first side of the active region, a second contact via in the second area for contacting a second side of the active region and a conductive layer comprising a plurality of first regions and a second region surrounding the plurality of first regions and electrically isolated from the plurality of first regions, the conductive layer having a substantially planar surface and being arranged planar onto the plurality of first areas and the second area such that each of the plurality of first regions of the conductive layer is in contact with the first contact via in the respective area of the plurality of first areas and the second region of the conductive layer is in contact with the second contact via of the first dielectric layer.

公开(公告)号：US20200350359A1

公开(公告)日：2020-11-05

申请号：US16316166

申请日：2017-05-26

申请人： OSRAM OLED GmbH

发明人： Marika Hirmer ,  Sophia Huppmann ,  Simeon Katz

IPC分类号： H01L27/15 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/00

摘要： A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively reflective mirror structure.

公开(公告)号：US20200294962A1

公开(公告)日：2020-09-17

申请号：US16768208

申请日：2019-02-05

申请人： OSRAM OLED GmbH

发明人： Simeon Katz ,  Mathias Wendt ,  Sophia Huppmann ,  Marcus Zenger ,  Jens Mueller

IPC分类号： H01L23/00 ,  H01L33/62

摘要： A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

公开(公告)号：US11557691B2

公开(公告)日：2023-01-17

申请号：US16958055

申请日：2019-02-06

申请人： OSRAM OLED GmbH

发明人： Simeon Katz ,  Sophia Huppmann

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01S5/0236

摘要： In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

公开(公告)号：US20210066539A1

公开(公告)日：2021-03-04

申请号：US16958055

申请日：2019-02-06

申请人： OSRAM OLED GmbH

发明人： Simeon Katz ,  Sophia Huppmann

IPC分类号： H01L33/00 ,  H01S5/022 ,  H01L33/62

摘要： In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150° C. to 400° C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

公开(公告)号：US10923400B2

公开(公告)日：2021-02-16

申请号：US16068051

申请日：2017-01-24

申请人： OSRAM OLED GMBH

发明人： Sophia Huppmann ,  Dominik Scholz ,  Simeon Katz

IPC分类号： H01L21/82 ,  H01L23/00

摘要： The invention relates to a method for producing a plurality of components (100), wherein a carrier composite (10) is provided with a coherent base body (13) and a wafer composite (200) is provided with a coherent semiconductor body composite (20) and a substrate (9). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels (60) are generated at least through the base body (13) to form a grid structure (6), which determines the dimensions of the components (100) to be produced. A passivation layer (61) is shaped in such a way that it covers the side surfaces of the separation channels (60). Finally, the common composite is separated, wherein the substrate (9) is removed from the semiconductor body composite (20) and the common composite is separated along the separation channels (60) to form a plurality of components (100).

公开(公告)号：US10686099B2

公开(公告)日：2020-06-16

申请号：US16081402

申请日：2017-02-10

申请人： OSRAM OLED GmbH

发明人： Sophia Huppmann ,  Simeon Katz ,  Marcus Zenger

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L23/00 ,  H01L27/15 ,  H01L25/075 ,  H01L33/32

摘要： An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.