公开(公告)号：US20180172609A1

公开(公告)日：2018-06-21

申请号：US15845313

申请日：2017-12-18

Applicant: Nova Measuring Instruments Ltd. ,  GLOBALFOUNDRIES Inc.

Inventor： Wei Ti LEE ,  Heath A. POIS ,  Mark KLARE ,  Cornel BOZDOG ,  Alok VAID

IPC: G01N23/2208 ,  G01B15/02 ,  G01B11/06 ,  G01N23/2273 ,  G01N23/223

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633 ,  H01L22/12

Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.

公开(公告)号：US20160076876A1

公开(公告)日：2016-03-17

申请号：US14852897

申请日：2015-09-14

Applicant: Nova Measuring Instruments Ltd. ,  GLOBAL FOUNDRIES

Inventor： Gilad WAINREB ,  Etai LITTWIN ,  Alok VAID ,  Michael KLOTS ,  Cornel BOZDOG ,  Matthew SENDELBACH

IPC: G01B11/06

CPC classification number: G01B11/06 ,  G01B2210/56 ,  G03F7/705 ,  G03F7/70625

Abstract: A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.

Abstract translation: 提出了一种用于图案化结构中基于模型的光学测量的方法和系统。 该方法包括：选择用于解释表示测量结构的光学响应的​​光学测量数据的最佳光学模型。 最佳光学模型的选择包括：创建具有定义所述完整模型的多个配置的浮动参数的完整光学模型，包括描述测量结构的光学响应的​​一个或多个模型配置，利用完整模型来预测参考光学响应 并从该结构生成对应的虚拟参考数据，并使用虚拟参考数据来选择用于解释光学测量数据的最佳光学模型。

公开(公告)号：US20170082423A1

公开(公告)日：2017-03-23

申请号：US14857914

申请日：2015-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig TIMONEY ,  Alok VAID

IPC: G01B11/06 ,  G01N21/47 ,  H01L21/02 ,  H01L21/66 ,  H01L21/306

CPC classification number: G01B11/06 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.

公开(公告)号：US20180135967A1

公开(公告)日：2018-05-17

申请号：US15870108

申请日：2018-01-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig TIMONEY ,  Alok VAID

IPC: G01B11/06 ,  H01L21/66

CPC classification number: G01B11/06 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.

公开(公告)号：US20170199511A1

公开(公告)日：2017-07-13

申请号：US14993320

申请日：2016-01-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Dongsuk PARK ,  Alok VAID ,  Binod Kumar Gopalakrishn NAIR

IPC: G05B19/4099

CPC classification number: G05B19/4099 ,  G05B2219/32019 ,  G05B2219/32104 ,  G05B2219/45031

Abstract: Methodologies and a device for simulating individual process steps and producing parameters representing each individual process signal profile are provided. Embodiments include collecting, by way of a programmed processor, wafer level data in the form of electrical signatures during processing steps in the production of a semiconductor device; converting the electrical signatures during each of the processing steps into signal matrix (MS) modeling parameters; comparing the MS modeling parameters to predefined MS modeling parameters; and adjusting at least one processing step based on a result of the comparing step for process control.

公开(公告)号：US20150198435A1

公开(公告)日：2015-07-16

申请号：US14155504

申请日：2014-01-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alok VAID ,  Abner BELLO ,  Sipeng GU ,  Lokesh SUBRAMANY ,  Xiang HU ,  Akshey SEHGAL

IPC: G01B11/06 ,  H01L21/66

CPC classification number: H01L22/12 ,  G01B11/02 ,  G01B11/0633 ,  G01B11/065 ,  G01B2210/56 ,  G01N21/211 ,  G03F7/70616 ,  G03F7/70625

Abstract: Measurement of thickness of layers of a circuit structure is obtained, where the thickness of the layers is measured using an optical critical dimension (OCD) measurement technique, and the layers includes a high-k layer and an interfacial layer. Measurement of thickness of the high-k layer is separately obtained, where the thickness of the high-k layer is measured using a separate measurement technique from the OCD measurement technique. The separate measurement technique provides greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer of the layers. Characteristics of the circuit structure, such as a thickness of the interfacial layer, are ascertained using, in part, the separately obtained thickness measurement of the high-k layer.

Abstract translation: 获得电路结构层的厚度的测量，其中使用光学临界尺寸（OCD）测量技术测量层的厚度，并且层包括高k层和界面层。 分别获得高k层的厚度的测量，其中使用来自OCD测量技术的单独的测量技术来测量高k层的厚度。 与OCD测量技术相比，单独的测量技术提供了来自层的界面层厚度的信号的高k层厚度的信号的更大的去耦。 电路结构的特性，如界面层的厚度，部分使用单独获得的高k层的厚度测量来确定。