公开(公告)号：US20240006848A1

公开(公告)日：2024-01-04

申请号：US18255153

申请日：2020-12-24

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Tatsuro Hiraki

IPC分类号： H01S5/10 ,  H01S5/125 ,  H01S5/12 ,  H01S5/00

CPC分类号： H01S5/101 ,  H01S5/125 ,  H01S5/1228 ,  H01S5/0078 ,  H01S5/1039

摘要： An optical semiconductor element includes, in order, a semiconductor laser, an optical waveguide, a loop waveguide, and a ring resonator optically coupled to the loop waveguide, in which a distance between the semiconductor laser and the ring resonator is 1 μm or more and 200 μm or less.

公开(公告)号：US20220393430A1

公开(公告)日：2022-12-08

申请号：US17624426

申请日：2019-07-09

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Tai Tsuchizawa ,  Tatsuro Hiraki

IPC分类号： H01S5/12 ,  H01S5/026

摘要： A semiconductor optical device includes a light emitting layer that emits light in a state of current injection; an optical waveguide in which a width or a thickness in an extending direction (y) of the light emitting layer varies along the extending direction; and a uniform diffraction grating having constant cycle, width and depth, wherein the light emitting layer, the optical waveguide and the uniform diffraction grating are arranged at positions where the light emitting layer, the optical waveguide, and the uniform diffraction grating are optically coupled to one another, the uniform diffraction grating is arranged above the light emitting layer, the optical waveguide is arranged below the light emitting layer, and the optical waveguide includes, in the extending direction, a first portion having a predetermined width, a second portion having a larger width than the width of the first portion, and a third portion having the same width as the width of the first portion.

公开(公告)号：US20220328704A1

公开(公告)日：2022-10-13

申请号：US17615976

申请日：2019-06-06

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara ,  Tatsuro Hiraki

IPC分类号： H01L31/0232 ,  H01L31/103 ,  H01L31/028 ,  H01L31/18 ,  G02B6/122 ,  G02B6/132

摘要： A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.

公开(公告)号：US20240361526A1

公开(公告)日：2024-10-31

申请号：US18686636

申请日：2021-09-29

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Tatsuro Hiraki ,  Yoshiho Maeda

IPC分类号： G02B6/122 ,  G02B6/12

CPC分类号： G02B6/1228 ,  G02B2006/12097

摘要： An optical connection structure includes a first optical waveguide and a second optical waveguide. The first optical waveguide is a rib-type optical waveguide including a core and a slab by a rib. Also, the first optical waveguide is formed in an optical connection region on a substrate. The second optical waveguide is formed on the substrate. The second optical waveguide includes an Si core made of Si. The second optical waveguide is disposed on the substrate in the optical connection region to overlap the first optical waveguide in a height direction.

公开(公告)号：US20220085576A1

公开(公告)日：2022-03-17

申请号：US17421467

申请日：2020-01-17

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Takaaki Kakitsuka ,  Tai Tsuchizawa ,  Tatsuro Hiraki

IPC分类号： H01S5/323 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/0687

摘要： Provided is a tunable laser that prevents basic characteristics of the laser from deteriorating and enables a high-speed control of the oscillation wavelength. The tunable laser includes a semiconductor gain portion including a III-V compound semiconductor, an optical feedback portion configured to diffract light generated in the semiconductor gain portion and feed the diffracted light back to the semiconductor gain portion, and an optical modulation portion including an optical waveguide that contains doped indirect transition-type silicon. The semiconductor gain portion and the optical modulation portion are disposed so that optical modes thereof overlap each other, and the semiconductor gain portion includes an embedded active layer thin film of a type in which a current is injected in a lateral direction.

公开(公告)号：US12051884B2

公开(公告)日：2024-07-30

申请号：US17045003

申请日：2019-03-28

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Tai Tsuchizawa ,  Takaaki Kakitsuka ,  Tatsurou Hiraki

IPC分类号： H01S5/10 ,  H01S5/02 ,  H01S5/026 ,  H01S5/14

CPC分类号： H01S5/1014 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/142

摘要： A wavelength tunable laser formed on a substrate made of single-crystal silicon is provided. The wavelength tunable laser includes a light emitting portion made of a III-V compound semiconductor, and external resonators provided with an optical filter. Cores included in the external resonators are made of one of SiN, SiON, and SiOn (n is smaller than 2).

公开(公告)号：US11996489B2

公开(公告)日：2024-05-28

申请号：US17615976

申请日：2019-06-06

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara ,  Tatsuro Hiraki

IPC分类号： H01L31/0232 ,  G02B6/122 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18 ,  G02B6/12

CPC分类号： H01L31/02327 ,  G02B6/1228 ,  G02B6/132 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  G02B2006/12061 ,  G02B2006/12123

摘要： A silicon nitride core is formed on a silicon core via a first silicon oxide layer, and a germanium pattern caused to selectively grow in an opening penetrating through a second silicon oxide layer formed on the silicon nitride core and the first silicon oxide layer is formed on a lower silicon pattern formed to be continuous with the silicon core, thereby constituting a Ge photodiode.

公开(公告)号：US11705693B2

公开(公告)日：2023-07-18

申请号：US17421237

申请日：2019-12-24

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Aihara ,  Shinji Matsuo ,  Takaaki Kakitsuka ,  Tai Tsuchizawa ,  Tatsuro Hiraki

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/12 ,  H01S5/10 ,  H01S5/042 ,  H01S5/065 ,  G02B6/028 ,  H01S5/223

CPC分类号： H01S5/2031 ,  H01S5/0424 ,  H01S5/0651 ,  H01S5/1032 ,  H01S5/12 ,  H01S5/2018 ,  H01S5/2022 ,  H01S5/2027 ,  G02B6/0281 ,  H01S5/223 ,  H01S2301/16

摘要： An embodiment semiconductor optical device includes an optical waveguide including a core, and an active layer extending in the waveguide direction of the optical waveguide for a predetermined distance and arranged in a state in which the active layer can be optically coupled to the core. The core and the active layer are arranged in contact with each other. The core is formed of a material with a refractive index of about 1.5 to 2.2, such as SiN, for example. In addition, the core is formed to a thickness at which a higher-order mode appears. The higher-order mode is an E12 mode, for example.

公开(公告)号：US20210181412A1

公开(公告)日：2021-06-17

申请号：US17055555

申请日：2019-05-09

申请人： Nippon Telegraph and Telephone Corporation

发明人： Tai Tsuchizawa ,  Takuma Aihara

IPC分类号： G02B6/122 ,  G02B6/132

摘要： Included are an optical waveguide including a first cladding layer formed on a substrate; a core formed on the first cladding layer; and a second cladding layer formed on the first cladding layer so as to cover the core. At least one of the first cladding layer and the second cladding layer is composed of a cladding material of silicon oxide containing deuterium atoms. The number of hydrogen atoms contained in the cladding material is smaller than the number of the deuterium atoms contained in the cladding material.

公开(公告)号：US20240039242A1

公开(公告)日：2024-02-01

申请号：US18254902

申请日：2020-12-22

申请人： Nippon Telegraph and Telephone Corporation

发明人： Takuma Tsurugaya ,  Shinji Matsuo ,  Toru Segawa ,  Takuma Aihara

IPC分类号： H01S5/12 ,  H01S5/125 ,  H01S5/065 ,  H01S5/0687

CPC分类号： H01S5/1243 ,  H01S5/125 ,  H01S5/0654 ,  H01S5/0687

摘要： A wavelength-tunable laser a circling waveguide having a circling structure; a first coupled waveguide coupled to the circling waveguide in one region; and a second coupled waveguide coupled to the circling waveguide in another region, wherein a first reflection region is connected in the light guiding direction of the first coupled waveguide, an active region and a second reflection region are sequentially connected in the light guiding direction of the second coupled waveguide, and the refractive index of at least part of the circling waveguide is modulated.