-
公开(公告)号：US20240027681A1
公开(公告)日：2024-01-25
申请号：US18245031
申请日：2020-09-15
发明人： Koji Takeda , Takuro Fujii , Tomonari Sato , Toshiki Kishi , Yoshiho Maeda , Toru Segawa , Shinji Matsuo
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B2006/12121
摘要： A photoelectric conversion device includes a plurality of optical waveguides that are formed on a substrate and have the same waveguide direction, and a plurality of waveguide-type photoelectric conversion elements that are connected to the respective optical waveguides. The plurality of photoelectric conversion elements is arranged in the waveguide direction of the plurality of optical waveguides. In a planar view, the line segment connecting the photoelectric conversion elements adjacent to one another in the waveguide direction of the plurality of photoelectric conversion elements is inclined with respect to the waveguide direction.
-
公开(公告)号：US20230253516A1
公开(公告)日：2023-08-10
申请号：US18002809
申请日：2020-07-22
发明人： Tatsuro Hiraki , Shinji Matsuo
IPC分类号： H01L31/0232 , H01L31/0304 , H01L31/113 , H01L31/18 , G02B6/13
CPC分类号： H01L31/02327 , G02B6/13 , H01L31/0304 , H01L31/1136 , H01L31/1844
摘要： An embodiment photodetector includes a clad layer formed on a substrate, a first semiconductor layer formed on the clad layer, and a second semiconductor layer and a third semiconductor layer with the first semiconductor layer interposed therebetween formed on the clad layer. The photodetector includes a light absorbing layer made of an n-type III-V compound semiconductor formed on the first semiconductor layer through an insulating layer.
-
公开(公告)号：US20230009186A1
公开(公告)日：2023-01-12
申请号：US17783334
申请日：2019-12-17
发明人： Takuma Tsurugaya , Takuro Fujii , Koji Takeda , Shinji Matsuo
摘要： In an optical device, a first semiconductor layer and a second semiconductor layer are formed to be thinner than a core, an active layer has a shape with an end in a waveguide direction tapers toward a tip end, the first semiconductor layer having a trapezoidal shape with a width thereof decreases toward a side of a third semiconductor layer from a side of the core in a plan view and a width thereof decreases as one end in the waveguide direction recedes from a central portion of the active region, and the second semiconductor layer having a trapezoidal shape with a width thereof decreases toward a side of a fourth semiconductor layer from the side of the core in a plan view and a width thereof decreases as one end in the waveguide direction recedes from the central portion of the active region.
-
公开(公告)号：US20220393430A1
公开(公告)日：2022-12-08
申请号：US17624426
申请日：2019-07-09
发明人： Takuma Aihara , Shinji Matsuo , Tai Tsuchizawa , Tatsuro Hiraki
摘要： A semiconductor optical device includes a light emitting layer that emits light in a state of current injection; an optical waveguide in which a width or a thickness in an extending direction (y) of the light emitting layer varies along the extending direction; and a uniform diffraction grating having constant cycle, width and depth, wherein the light emitting layer, the optical waveguide and the uniform diffraction grating are arranged at positions where the light emitting layer, the optical waveguide, and the uniform diffraction grating are optically coupled to one another, the uniform diffraction grating is arranged above the light emitting layer, the optical waveguide is arranged below the light emitting layer, and the optical waveguide includes, in the extending direction, a first portion having a predetermined width, a second portion having a larger width than the width of the first portion, and a third portion having the same width as the width of the first portion.
-
公开(公告)号：US20220357604A1
公开(公告)日：2022-11-10
申请号：US17619679
申请日：2019-07-02
发明人： Tatsuro Hiraki , Shinji Matsuo , Tai Tsuchizawa
摘要： A core, constituted by an amorphous undoped semiconductor (i type), which is formed on a lower clad layer, and a p-type layer and an n-type layer which are disposed on the lower clad layer with the core interposed therebetween and are formed in contact with the core are provided. The core is formed to be thicker than the p-type layer and the n-type layer. The p-type layer and the n-type layer are constituted by single crystal silicon.
-
公开(公告)号：US11417783B2
公开(公告)日：2022-08-16
申请号：US17263853
申请日：2019-08-02
发明人： Tatsuro Hiraki , Shinji Matsuo
IPC分类号： H01L31/0232 , H01L31/105 , H01L31/18
摘要： A semiconductor layer formed on a clad layer and a light absorbing layer formed on the semiconductor layer are provided. The semiconductor layer includes a p-type region and an n-type region. The p-type region, which is of p-type, is provided on a side of one side portion of the light absorbing layer in a direction perpendicular to a direction in which light is guided, and the n-type region, which is of n-type, is provided on a side of another side portion of the light absorbing layer in the direction perpendicular to the direction in which light is guided. A p-type contact layer, which is of p-type, is formed on the p-type region, and an n-type contact layer is formed on the n-type region.
-
公开(公告)号：US20210126430A1
公开(公告)日：2021-04-29
申请号：US17057037
申请日：2019-05-09
发明人： Erina Kanno , Koji Takeda , Takaaki Kakitsuka , Shinji Matsuo
摘要： A semiconductor laser includes a distributed feedback active region and two distribution Bragg reflecting mirror regions which are arranged to be continuous with the distributed feedback active region. The distributed feedback active region has an active layer which is composed of a compound semiconductor and a first diffraction grating. The first diffraction grating is composed of a recessed portion which is formed to extend through a diffraction grating layer formed on the active layer and a projection portion which is adjacent to the recessed portion.
-
公开(公告)号：US12119608B2
公开(公告)日：2024-10-15
申请号：US17419479
申请日：2019-12-26
摘要： A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and each of radiation waveguides connected to the cross ports of the input-output ports of the two optical couplers has a structure that radiates the light except the light at the resonant peak wavelength to a front surface or a back surface of a substrate.
-
公开(公告)号：US20240291233A1
公开(公告)日：2024-08-29
申请号：US18573028
申请日：2021-07-01
发明人： Suguru Yamaoka , Shinji Matsuo
摘要： A semiconductor optical device includes: a first cladding layer formed on a Si substrate; a core formed on the first cladding layer; and a second cladding layer formed on the first cladding layer to cover the core. A lower cladding layer including SiO2 or the like is formed on (a front surface of) the Si substrate, and the first cladding layer is formed on the lower cladding layer. The first cladding layer includes a material having thermal conductivity higher than thermal conductivity of a direct transition type semiconductor. A refractive index of the first cladding layer is higher than that of the second cladding layer and lower than that of the core. In an optical coupling region of an optical waveguide by the core, a cross-sectional shape of the core is in a state in which a substrate radiation mode appears.
-
公开(公告)号：US11977282B2
公开(公告)日：2024-05-07
申请号：US17619679
申请日：2019-07-02
发明人： Tatsuro Hiraki , Shinji Matsuo , Tai Tsuchizawa
CPC分类号： G02F1/025 , G02F1/0156 , G02F2202/103 , G02F2202/105
摘要： A core, constituted by an amorphous undoped semiconductor (i type), which is formed on a lower clad layer, and a p-type layer and an n-type layer which are disposed on the lower clad layer with the core interposed therebetween and are formed in contact with the core are provided. The core is formed to be thicker than the p-type layer and the n-type layer. The p-type layer and the n-type layer are constituted by single crystal silicon.
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.016 秒)
