公开(公告)号：US11901233B2

公开(公告)日：2024-02-13

申请号：US17327005

申请日：2021-05-21

申请人： NICHIA CORPORATION

发明人： Kazuki Yamaguchi ,  Yoshitaka Sumitomo

IPC分类号： H01L21/78 ,  B23K26/53 ,  B23K26/40 ,  H01L23/544 ,  B23K101/40

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  H01L23/544 ,  B23K2101/40

摘要： A method of manufacturing a semiconductor element includes a first irradiation step in which a laser beam is irradiated to form, in the interior of the substrate, a plurality of first modified portions aligned along a first direction; a second irradiation step in which a laser beam is irradiated to form a plurality of second modified portions aligned along the first direction at a position adjacent to the plurality of first modified portions in the second direction; and a third irradiation step which a laser beam is irradiated to form a plurality of third modified portions aligned along the first direction at a position closer to the first surface than the first modified portions and overlapping the plurality of first modified portions in a thickness direction of the substrate.

公开(公告)号：US10804427B2

公开(公告)日：2020-10-13

申请号：US16837150

申请日：2020-04-01

申请人： NICHIA CORPORATION

发明人： Kazuki Yamaguchi ,  Haruki Takeda ,  Yoshitaka Sumitomo

IPC分类号： H01L21/301 ,  B23K26/53 ,  B23K26/08 ,  B23K26/40 ,  H01L21/263 ,  H01L21/268 ,  H01L33/00 ,  H01L21/67 ,  B23K26/364 ,  H01L21/78 ,  B23K26/0622 ,  B23K101/40 ,  B23K101/36

摘要： A method of manufacturing a light-emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; forming a plurality of modified regions inside the substrate of the wafer by irradiating the substrate with a laser beam; and separating the wafer into a plurality of light-emitting elements after said irradiating the substrate with the laser beam. Said forming the plurality of modified regions includes: scanning the laser beam along a plurality of first lines, the plurality of first lines extending in a first direction and being arranged in a second direction, the first direction being parallel to the first surface, the second direction intersecting the first direction and being parallel to the first surface, and scanning the laser beam along a plurality of second lines, the plurality of second lines extending in the second direction and being arranged in the first direction.

公开(公告)号：US08878218B2

公开(公告)日：2014-11-04

申请号：US14054868

申请日：2013-10-16

申请人： Nichia Corporation

发明人： Kosuke Sato ,  Yoshitaka Sumitomo ,  Dai Wakamatsu ,  Yoshiyuki Aihara ,  Kimihiro Miyamoto ,  Satoshi Kinoshita

IPC分类号： H01L33/00 ,  H01L33/10

CPC分类号： H01L33/10 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.

摘要翻译： 本发明提供了在半透明基板的主表面上具有半导体层的半导体发光器件和与具有半导体层的主表面相对的第二主表面上的反射层，其能够使反射层从 透光性基板被抑制。 半导体发光器件包括与透光性基板的第二主面接触配置的第一金属层，与第一金属的至少第二主面或半透明基板的侧面相接触地设置的第二金属层 层和设置在第二金属层上的第三金属层。 第一金属层相对于从发光层发射的光的峰值波长的反射率高于第二金属层的反射率。 第二金属层相对于透光性基板具有比第一金属层和透光性基板之间的粘合性高的粘接性。