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公开(公告)号：US12022667B2
公开(公告)日：2024-06-25
申请号：US17521347
申请日：2021-11-08
Applicant: National University of Singapore
Inventor： Xuewei Feng , Kah Wee Ang
CPC classification number: H10B63/84 , G11C13/0002 , H10N70/011 , H10N70/253
Abstract: This disclosure describes a self-selective multi-terminal memtransistor suitable for use in crossbar array circuits. In particular, the memtransistor comprises a sapphire substrate that has a single-layer of polycrystalline molybdenum disulphide (MoS2) thin film formed on the surface of the substrate, wherein the MoS2 thin film comprise MoS2 grains that are oriented along terraces provided on the surface of the substrate. The memtransistor has a drain electrode and a source electrode that is formed on the MoS2 thin film such that a channel is defined in the MoS2 thin film between the drain and source electrodes, and a gate electrode formed above the channel, whereby the gate electrode is isolated from the channel by a gate dielectric layer.
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公开(公告)号：US20220149115A1
公开(公告)日：2022-05-12
申请号：US17521347
申请日：2021-11-08
Applicant: National University of Singapore
Inventor： Xuewei Feng , Kah Wee Ang
Abstract: This disclosure describes a self-selective multi-terminal memtransistor suitable for use in crossbar array circuits. In particular, the memtransistor comprises a sapphire substrate that has a single-layer of polycrystalline molybdenum disulphide (MoS2) thin film formed on the surface of the substrate, wherein the MoS2 thin film comprise MoS2 grains that are oriented along terraces provided on the surface of the substrate. The memtransistor has a drain electrode and a source electrode that is formed on the MoS2 thin film such that a channel is defined in the MoS2 thin film between the drain and source electrodes, and a gate electrode formed above the channel, whereby the gate electrode is isolated from the channel by a gate dielectric layer.
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