公开(公告)号：US20250157872A1

公开(公告)日：2025-05-15

申请号：US18506248

申请日：2023-11-10

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Asanga H. Perera ,  Sai-Wang Tam

IPC: H01L23/367 ,  H01L29/66 ,  H01L29/78

Abstract: One example discloses a finFet semiconductor device and corresponding manufacturing method is disclosed, the device comprising: a substrate having therein a body-region, a plurality of elongate fins at a first major surface and within the body-region; an oxide layer on the first major surface and partially surrounding a lower portion of the elongate fins; a gate contact extending across and partially surrounding an upper portion of the plurality of elongate fins; a dielectric material, between the fins and the gate region; a plurality of elongate partial fins, parallel thereto and having a height which is less than a height thereof; an elongate metal contact, extending into the substrate and in electrical contact with the partial fins, and forming a body-contact; wherein the elongate metal contact extends between the two of the elongate partial fins and below an upper surface thereof and fills a space therebetween.