公开(公告)号：US11050417B2

公开(公告)日：2021-06-29

申请号：US15922922

申请日：2018-03-16

Applicant: NXP B.V.

Inventor： Dongyong Zhu ,  Feng Cong ,  FuChun Zhan

IPC: H02H9/04 ,  H03K17/082 ,  H03K5/24

Abstract: Gate-protection circuitry protects a transistor, such as a MOSFET, from large gate-to-source voltage differentials that can permanently damage the transistor's gate-oxide layer. A source-voltage detector selectively enables the gate-protection circuitry based on a source voltage of the transistor. The gate-protection circuit is implemented without any Zener diodes. The transistor may be a load switch that is selectively controlled to apply a supply voltage to a load.

公开(公告)号：US20190149144A1

公开(公告)日：2019-05-16

申请号：US15922922

申请日：2018-03-16

Applicant: NXP B.V.

Inventor： Dongyong Zhu ,  Feng Cong ,  FuChun Zhan

IPC: H03K17/082 ,  H03K5/24 ,  H02H9/04

Abstract: Gate-protection circuitry protects a transistor, such as a MOSFET, from large gate-to-source voltage differentials that can permanently damage the transistor's gate-oxide layer. A source-voltage detector selectively enables the gate-protection circuitry based on a source voltage of the transistor. The gate-protection circuit is implemented without any Zener diodes. The transistor may be a load switch that is selectively controlled to apply a supply voltage to a load.