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公开(公告)号:US10274435B2
公开(公告)日:2019-04-30
申请号:US15523896
申请日:2015-11-02
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Boris Levant , Yanir Hainick , Vladimir Machavariani , Roy Koret , Gilad Barak
IPC: G01N21/956 , G01B11/02 , G01N21/95
Abstract: A data analysis method and system are presented for use in determining one or more parameters of a patterned structure located on top of an underneath layered structure. According to this technique, input data is provided which includes first measured data PMD being a function ƒ of spectral intensity Iλ and phase φ, PMD=ƒ(Iλ;φ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure. Also provided is a general function F describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD). The general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.
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公开(公告)号:US10761036B2
公开(公告)日:2020-09-01
申请号:US16398297
申请日:2019-04-30
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Boris Levant , Yanir Hainick , Vladimir Machavariani , Roy Koret , Gilad Barak
IPC: G01N21/956 , G01B11/02 , G03F7/20 , G01N21/95
Abstract: Determining parameters of a patterned structure located on top of an underneath layered structure, where input data is provided which includes first measured data PMD being a function ƒ of spectral intensity Iλ and phase ϕ, PMD=ƒ(Iλ; ϕ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure, and where a general function F is also provided describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD), where the general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.
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公开(公告)号:US10916404B2
公开(公告)日:2021-02-09
申请号:US16488974
申请日:2018-02-27
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Vladimir Machavariani , Michael Shifrin , Daniel Kandel , Victor Kucherov , Igor Ziselman , Ronen Urenski , Matthew Sendelbach
Abstract: A control system is presented for use in measuring one or more parameters of a three-dimensional patterned structure. The control system is configured as a computer system comprising a data processor configured to receive and process raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize data indicative of one or more parameters of TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and a predetermined simulated TEM image data, TEMsimui based on a parametrized three-dimensional model of features of the patterned structure, and generate simulated image data corresponding to a best fit condition, to thereby enable determination therefrom of the one or more parameters of the structure.
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公开(公告)号:US10564106B2
公开(公告)日:2020-02-18
申请号:US16062114
申请日:2016-12-15
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Gilad Barak , Yanir Hainick , Yonatan Oren , Vladimir Machavariani
Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the characteristic(s) to be measured; processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme; analyzing the distribution of Raman-contribution efficiency and determining the characteristic(s) of the structure.
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公开(公告)号:US20190317024A1
公开(公告)日:2019-10-17
申请号:US16398297
申请日:2019-04-30
Applicant: NOVA MEASURING INSTRUMENTS LTD.
Inventor: Boris Levant , Yanir Hainick , Vladimir Machavariani , Roy Koret , Gilad Barak
IPC: G01N21/956 , G03F7/20 , G01B11/02 , G01N21/95
Abstract: Determining parameters of a patterned structure located on top of an underneath layered structure, where input data is provided which includes first measured data PMD being a function ƒ of spectral intensity Iλ and phase ϕ, PMD=ƒ(Iλ; ϕ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure, and where a general function F is also provided describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD), where the general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.
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