SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE
    1.
    发明申请
    SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE 有权
    具有含硅结构的含硅膜成膜组合物

    公开(公告)号:US20140170855A1

    公开(公告)日:2014-06-19

    申请号:US14236136

    申请日:2012-08-10

    IPC分类号: H01L21/027 H01L21/311

    摘要: A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1): [(R1)aSi(R2)(3-a)]b(R3)  Formula (1) [in Formula (1), R3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

    摘要翻译: 一种用于形成光刻用抗蚀剂下层膜的组合物,包括:作为硅烷,可水解的有机硅烷,可水解的有机硅烷的水解产物或可水解的有机硅烷的水解缩合产物,其中可水解的有机硅烷是式(1 ):[(R1)aSi(R2)(3-a)] b(R3)式(1)[式(1)中,R3是具有磺酰基和光吸收基团的有机基团, 通过Si-C键的Si原子; R1是烷基,芳基,芳烷基,卤代烷基,卤代芳基,卤代芳烷基,烯基,具有环氧基,丙烯酰基,甲基丙烯酰基,巯基,烷氧基芳基,酰氧基芳基,异氰脲酸酯,羟基,环状氨基或氰基的有机基团, 这些基团中的任一个的组合,并且通过Si-C键与Si原子结合; R2是烷氧基,酰氧基或卤素基; a为0〜2的整数; b为1〜3的整数]。

    Composition for forming silicon-containing resist underlayer film having cyclic diester group
    3.
    发明授权
    Composition for forming silicon-containing resist underlayer film having cyclic diester group 有权
    用于形成具有环状二酯基团的含硅抗蚀剂下层膜的组合物

    公开(公告)号:US09290623B2

    公开(公告)日:2016-03-22

    申请号:US14654254

    申请日:2013-12-17

    摘要: A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes;Formula (1): R1aR2bSi(R3)4-(a+b) wherein R1 is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3; Formula (2): R4aR5bSi(R6)4-(a+b) wherein, R4 is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

    摘要翻译: 可用作硬掩模的抗蚀剂下层膜。 用于光刻的抗蚀剂下层膜形成组合物包括:作为硅烷,可水解硅烷,其水解产物或其水解缩合产物,其中所述可水解硅烷包括式(1)的可水解硅烷或含有 式(1)的可水解硅烷与式(2)的可水解硅烷在所有硅烷中的含量小于50摩尔%的组合; 式(1):R1aR2bSi(R3)4-(a + b)其中R1是含有式(1-1),式(1-2)或式(1-3)的有机基团:a是1和b 是0〜2的整数,a + b为1〜3的整数。 式(2):R4aR5bSi(R6)4-(a + b)其中,R4是含有式(2-1),式(2-2)或式(2-3)的有机基团:a是1和 b为0〜2的整数,a + b为1〜3的整数。