公开(公告)号：US11289621B2

公开(公告)日：2022-03-29

申请号：US16768029

申请日：2018-11-26

申请人： NICHIA CORPORATION ,  IMRA AMERICA, INC.

发明人： Minoru Yamamoto ,  Naoto Inoue ,  Hiroaki Tamemoto ,  Yoshitaka Hotta ,  Hideyuki Ohtake

IPC分类号： H01L21/00 ,  H01L33/00 ,  B23K26/0622 ,  B23K26/359 ,  B23K26/00 ,  B23K103/00

摘要： A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

公开(公告)号：US11945173B2

公开(公告)日：2024-04-02

申请号：US17847928

申请日：2022-06-23

申请人： Laser Systems Inc. ,  NICHIA CORPORATION

发明人： Yuichi Asakawa ,  Yasuyuki Tsuboi ,  Hiroaki Tamemoto ,  Ryota Taoka ,  Minoru Yamamoto

IPC分类号： B29C65/16 ,  B29C65/00

CPC分类号： B29C65/1609 ,  B29C66/91221 ,  B29C66/952

摘要： A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

公开(公告)号：US10672660B2

公开(公告)日：2020-06-02

申请号：US15902756

申请日：2018-02-22

申请人： NICHIA CORPORATION

发明人： Naoto Inoue ,  Sho Kusaka ,  Minoru Yamamoto ,  Masayuki Ibaraki ,  Hiroaki Tamemoto

IPC分类号： H01L21/78 ,  B23K26/57 ,  H01L33/00 ,  B23K26/53 ,  B23K103/00

摘要： A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

公开(公告)号：US11769852B2

公开(公告)日：2023-09-26

申请号：US16945729

申请日：2020-07-31

申请人： NICHIA CORPORATION

发明人： Masayuki Ibaraki ,  Minoru Yamamoto ,  Naoto Inoue ,  Hiroaki Tamemoto

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L25/075 ,  H01L33/20

CPC分类号： H01L33/0095 ,  H01L25/0753 ,  H01L33/20

摘要： A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

公开(公告)号：US11489086B2

公开(公告)日：2022-11-01

申请号：US16908354

申请日：2020-06-22

申请人： NICHIA CORPORATION

发明人： Naoto Inoue ,  Minoru Yamamoto ,  Satoshi Okumura ,  Hiroki Okamoto ,  Hiroaki Tamemoto

IPC分类号： H01L33/00

摘要： A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.