公开(公告)号：US10672660B2

公开(公告)日：2020-06-02

申请号：US15902756

申请日：2018-02-22

申请人： NICHIA CORPORATION

发明人： Naoto Inoue ,  Sho Kusaka ,  Minoru Yamamoto ,  Masayuki Ibaraki ,  Hiroaki Tamemoto

IPC分类号： H01L21/78 ,  B23K26/57 ,  H01L33/00 ,  B23K26/53 ,  B23K103/00

摘要： A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

公开(公告)号：US11769852B2

公开(公告)日：2023-09-26

申请号：US16945729

申请日：2020-07-31

申请人： NICHIA CORPORATION

发明人： Masayuki Ibaraki ,  Minoru Yamamoto ,  Naoto Inoue ,  Hiroaki Tamemoto

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L25/075 ,  H01L33/20

CPC分类号： H01L33/0095 ,  H01L25/0753 ,  H01L33/20

摘要： A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.