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公开(公告)号：US11094853B2
公开(公告)日：2021-08-17
申请号：US16857685
申请日：2020-04-24
发明人： Dong-Sing Wuu , Ray-Hua Horng , Po-Wei Chen
摘要： A passive micro light-emitting diode matrix device with uniform luminance includes a micro light-emitting diode matrix including a plurality of micro light-emitting matrices, each of which includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.
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公开(公告)号：US20150179887A1
公开(公告)日：2015-06-25
申请号：US14558507
申请日：2014-12-02
发明人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
摘要： A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from AlyInzGa(1-y-z)N, wherein 0 y. The tunneling layer has a band gap greater than that of the second conductive film. The current spreading layer is stacked on the tunneling layer.
摘要翻译： 发光二极管包括外延衬底，有源层，隧穿层，电流扩散层和电极单元。 有源层包括由AlyInzGa（1-yz）N制成的第一导电型膜，量子阱结构和第二导电型膜，其中0
y。 隧道层的带隙大于第二导电膜的带隙。 电流扩散层堆叠在隧道层上。 -
公开(公告)号：US09331250B1
公开(公告)日：2016-05-03
申请号：US14602236
申请日：2015-01-21
发明人： Dong-Sing Wuu , Shih-Hao Chuang , Ray-Hua Horng
CPC分类号： H01L33/44 , H01L33/0075 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01L2933/0025
摘要： A light emitting device includes: a light emitting layered structure; an electrode unit connected to the light emitting layered structure and including a transparent electrode layer of a primary metal oxide which is stacked on the light emitting layered structure along a stacking direction; and a total-internal-reflection suppression material dispersed in the transparent electrode layer and containing a secondary metal oxide that is different from the primary metal oxide. The secondary metal oxide has a concentration gradient within the transparent electrode layer along the stacking direction. The light output power of the light emitting device may be increased by about 44% as compared to a conventional light emitting device.
摘要翻译： 发光器件包括：发光层状结构; 连接到发光层状结构的电极单元，其包括层叠在发光层叠结构上的主金属氧化物的透明电极层，沿层叠方向; 以及分散在透明电极层中并含有不同于一次金属氧化物的二次金属氧化物的全内反射抑制材料。 二次金属氧化物沿着堆叠方向具有在透明电极层内的浓度梯度。 与传统的发光器件相比，发光器件的光输出功率可以增加大约44％。
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公开(公告)号：US09054275B1
公开(公告)日：2015-06-09
申请号：US14558507
申请日：2014-12-02
发明人： Dong-Sing Wuu , Ray-Hua Horng , Tsung-Yen Tsai
摘要： A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from AlyInzGa(1-y-z)N, wherein 0 y. The tunneling layer has a band gap greater than that of the second conductive film. The current spreading layer is stacked on the tunneling layer.
摘要翻译： 发光二极管包括外延衬底，有源层，隧穿层，电流扩散层和电极单元。 有源层包括由AlyInzGa（1-yz）N制成的第一导电型膜，量子阱结构和第二导电型膜，其中0
y。 隧道层的带隙大于第二导电膜的带隙。 电流扩散层堆叠在隧道层上。 -
公开(公告)号：US11294476B1
公开(公告)日：2022-04-05
申请号：US17358665
申请日：2021-06-25
发明人： Dong-Sing Wuu , Ray-Hua Horng , Ken-Yen Chen , Tsing-Ping Liao
摘要： A multi-functional control device includes a casing unit, and press button modules disposed on a main circuit board in the casing unit. Each press button module includes a sub-circuit board connected to the main circuit board, a micro-contact switch mounted on the sub-circuit board, an auxiliary case removably mounted on the micro-contact switch, a driving circuit board removably disposed in the auxiliary case to connect the sub-circuit board, a display module removably disposed on the auxiliary case. A transparent cap covers the display module and the auxiliary case, and is detachably connected to the auxiliary case.
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公开(公告)号：US11177245B2
公开(公告)日：2021-11-16
申请号：US16854531
申请日：2020-04-21
发明人： Dong-Sing Wuu , Shuo-Huang Yuan , Po-Wei Chen , Ray-Hua Horng
IPC分类号： H01L25/075 , H01L33/38 , H01L33/62 , H01L25/16 , H01L33/44
摘要： A large area passive micro light-emitting diode matrix display includes a plurality of micro light-emitting diode matrices and an external circuit component. Each of the micro light-emitting diode matrices includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.
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7.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE FOR USE THEREIN AND SEMI-FINISHED SEMICONDUCTOR DEVICE 有权制造半导体器件的方法，其使用的外延衬底和半成品半导体器件公开(公告)号：US20130313686A1
公开(公告)日：2013-11-28
申请号：US13846298
申请日：2013-03-18
发明人： Ray-Hua Horng , Ming-Chun Tseng , Fan-Lei Wu
CPC分类号： H01L21/76254 , H01L21/02002 , H01L21/76251 , H01L21/7813 , H01L29/06
摘要： A method for manufacturing a semiconductor device includes: (a) providing a base unit made of a material having a first lattice constant; (b) forming a first sacrificial layer made of a material having a second lattice constant on the base unit and a second sacrificial layer made of a material having a third lattice constant on the first sacrificial layer, the first lattice constant ranging between the second and third lattice constants so that two lattice stresses in opposite directions occur in the epitaxial substrate; (c) forming an epitaxial unit on the second sacrificial layer; (d) forming a permanent substrate on the epitaxial unit; and (e) removing the epitaxial unit.
摘要翻译： 一种制造半导体器件的方法包括：（a）提供由具有第一晶格常数的材料制成的基底单元; （b）在所述基底单元上形成由具有第二晶格常数的材料制成的第一牺牲层和在所述第一牺牲层上由具有第三晶格常数的材料制成的第二牺牲层，所述第一晶格常数在所述第二和第二牺牲层之间， 第三晶格常数，使得在外延衬底中发生相反方向的两个晶格应力; （c）在所述第二牺牲层上形成外延单元; （d）在所述外延单元上形成永久性基板; 和（e）去除外延单元。
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公开(公告)号：US20160118545A1
公开(公告)日：2016-04-28
申请号：US14602236
申请日：2015-01-21
发明人： Dong-Sing Wuu , Shih-Hao Chuang , Ray-Hua Horng
CPC分类号： H01L33/44 , H01L33/0075 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01L2933/0025
摘要： A light emitting device includes: a light emitting layered structure; an electrode unit connected to the light emitting layered structure and including a transparent electrode layer of a primary metal oxide which is stacked on the light emitting layered structure along a stacking direction; and a total-internal-reflection suppression material dispersed in the transparent electrode layer and containing a secondary metal oxide that is different from the primary metal oxide. The secondary metal oxide has a concentration gradient within the transparent electrode layer along the stacking direction. The light output power of the light emitting device may be increased by about 44% as compared to a conventional light emitting device.
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9.发明授权Method for manufacturing semiconductor device, epitaxial substrate for use therein and semi-finished semiconductor device 有权制造半导体器件的方法，其中使用的外延衬底和半成品半导体器件公开(公告)号：US08853055B2
公开(公告)日：2014-10-07
申请号：US13846298
申请日：2013-03-18
发明人： Ray-Hua Horng , Ming-Chun Tseng , Fan-Lei Wu
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L29/06 , H01L21/78
CPC分类号： H01L21/76254 , H01L21/02002 , H01L21/76251 , H01L21/7813 , H01L29/06
摘要： A method for manufacturing a semiconductor device includes: (a) providing a base unit made of a material having a first lattice constant; (b) forming a first sacrificial layer made of a material having a second lattice constant on the base unit and a second sacrificial layer made of a material having a third lattice constant on the first sacrificial layer, the first lattice constant ranging between the second and third lattice constants so that two lattice stresses in opposite directions occur in the epitaxial substrate; (c) forming an epitaxial unit on the second sacrificial layer; (d) forming a permanent substrate on the epitaxial unit; and (e) removing the epitaxial unit.
摘要翻译： 一种制造半导体器件的方法包括：（a）提供由具有第一晶格常数的材料制成的基底单元; （b）在所述基底单元上形成由具有第二晶格常数的材料制成的第一牺牲层和在所述第一牺牲层上由具有第三晶格常数的材料制成的第二牺牲层，所述第一晶格常数在所述第二和第二牺牲层之间， 第三晶格常数，使得在外延衬底中发生相反方向的两个晶格应力; （c）在所述第二牺牲层上形成外延单元; （d）在所述外延单元上形成永久性基板; 和（e）去除外延单元。
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公开(公告)号：US20220100284A1
公开(公告)日：2022-03-31
申请号：US17358665
申请日：2021-06-25
发明人： Dong-Sing Wuu , Ray-Hua Horng , Ken-Yen Chen , Tsing-Ping Liao
摘要： A multi-functional control device includes a casing unit, and press button modules disposed on a main circuit board in the casing unit. Each press button module includes a sub-circuit board connected to the main circuit board, a micro-contact switch mounted on the sub-circuit board, an auxiliary case removably mounted on the micro-contact switch, a driving circuit board removably disposed in the auxiliary case to connect the sub-circuit board, a display module removably disposed on the auxiliary case. A transparent cap covers the display module and the auxiliary case, and is detachably connected to the auxiliary case.
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