发明授权
- 专利标题： Method for manufacturing semiconductor device, epitaxial substrate for use therein and semi-finished semiconductor device
- 专利标题（中）： 制造半导体器件的方法，其中使用的外延衬底和半成品半导体器件
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申请号： US13846298申请日： 2013-03-18
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公开(公告)号： US08853055B2公开(公告)日： 2014-10-07
- 发明人: Ray-Hua Horng , Ming-Chun Tseng , Fan-Lei Wu
- 申请人： National Chung-Hsing University
- 申请人地址： TW Taichung
- 专利权人： National Chung-Hsing University
- 当前专利权人： National Chung-Hsing University
- 当前专利权人地址： TW Taichung
- 代理机构： Foley & Lardner LLP
- 优先权： TW101118165A 20120522
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46 ; H01L21/762 ; H01L29/06 ; H01L21/78
摘要：
A method for manufacturing a semiconductor device includes: (a) providing a base unit made of a material having a first lattice constant; (b) forming a first sacrificial layer made of a material having a second lattice constant on the base unit and a second sacrificial layer made of a material having a third lattice constant on the first sacrificial layer, the first lattice constant ranging between the second and third lattice constants so that two lattice stresses in opposite directions occur in the epitaxial substrate; (c) forming an epitaxial unit on the second sacrificial layer; (d) forming a permanent substrate on the epitaxial unit; and (e) removing the epitaxial unit.
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