公开(公告)号：US20190178860A1

公开(公告)日：2019-06-13

申请号：US15837227

申请日：2017-12-11

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： TING-JEN HSUEH ,  YU-JEN HSIAO ,  YU-TE LIN ,  YEN-HSI LI ,  YUNG-HSIANG CHEN ,  JIA-MIN SHIEH

IPC: G01N33/00 ,  G01N21/359 ,  G01N27/62 ,  G01N21/3504

Abstract: The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.

公开(公告)号：US20180248044A1

公开(公告)日：2018-08-30

申请号：US15905729

申请日：2018-02-26

Applicant: National Applied Research Laboratories

Inventor： WEN-HSIEN HUANG ,  JIA-MIN SHIEH ,  CHANG-HONG SHEN

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324

Abstract: A flexible substrate structure including a flexible substrate, a first dielectric layer, a metal-containing layer and a second dielectric layer is provided. The first dielectric layer is located on the flexible substrate. The metal-containing layer has a reflectivity greater than 15% and a heat transfer coefficient greater than 2 W/m-K. The metal-containing layer is disposed between the first dielectric layer and the second dielectric layer, and the second dielectric layer is an inorganic material layer. A flexible transistor including the above-mentioned flexible substrate structure and a method for fabricating the same are also provided.

公开(公告)号：US20180038816A1

公开(公告)日：2018-02-08

申请号：US15370384

申请日：2016-12-06

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： YU-JEN HSIAO ,  TING-JEN HSUEH ,  YU-TE LIN ,  YEN-HSI LI ,  JIA-MIN SHIEH ,  CHIEN-WEI LIU ,  CHI-WEI CHIANG

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N27/125 ,  G01N27/128 ,  G01N33/004

Abstract: The present invention provides a gas sensor structure comprising a gas sensing chip. The back of the sensing material is a hollow structure. An insulating layer is below the sensing material. A micro heating is disposed surrounding the sensing material. The sensing material adheres to sensing electrodes. The sensing material is a complex structure including a metal oxide semiconductor and a roughened lanthanum-carbonate gas sensing layer. The thickness of the metal oxide semiconductor is between 0.2 μm and 10 μm; the thickness of the roughened lanthanum-carbonate gas sensing layer is between 0.1 μm and 4 μm; and the size of the back etching holes is smaller than 1*1 mm. By using the gas sensor structure according to the present invention, a suspended gas sensing structure can be fabricated on a silicon substrate and the chip size can be minimized.

公开(公告)号：US20170110444A1

公开(公告)日：2017-04-20

申请号：US14883227

申请日：2015-10-14

Applicant: National Applied Research Laboratories

Inventor： CHANG-HONG SHEN ,  JIA-MIN SHIEH ,  WEN-HSIEN HUANG ,  TSUNG-TA WU ,  CHIH-CHAO YANG ,  TUNG-YING HSIEH

IPC: H01L25/16 ,  H01L31/0725 ,  H01L31/054 ,  H01L31/074

CPC classification number: H01L25/167 ,  H01L23/58 ,  H01L31/028 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: A chipset with light energy harvester, includes a substrate, a functional element layer, and a light energy harvesting layer, both are stacked vertically on the substrate, and an interconnects connected between the functional element layer and the light energy harvesting layer.