METHOD FOR OPERATING A BENCHMARK DEVICE ON A SEMICONDUCTOR WAFER WITH FUSE ELEMENT

    公开(公告)号:US20230116846A1

    公开(公告)日:2023-04-13

    申请号:US17497744

    申请日:2021-10-08

    摘要: The present disclosure provides a method of operating a benchmark device embedded on a semiconductor wafer. The method includes applying a first voltage to a first electrode of the benchmark device, and applying a second voltage to a second electrode of the benchmark device. The method further includes electrically isolating a first component of the benchmark device from a second component of the benchmark device through a disconnecting switch connected between the first component and the second component.

    BENCHMARK DEVICE ON A SEMICONDUCTOR WAFER WITH FUSE ELEMENT

    公开(公告)号:US20230116600A1

    公开(公告)日:2023-04-13

    申请号:US17499911

    申请日:2021-10-13

    摘要: A semiconductor wafer, a benchmark device embedded on a semiconductor wafer, and a method of operating a benchmark device embedded on a semiconductor wafer are provided. The semiconductor wafer includes a benchmark device disposed within a scribe line of the semiconductor wafer. The benchmark device includes a transistor, a diode, and a disconnecting switch electrically connected to the transistor and the diode. The disconnecting switch is configured to form a conductive path between the transistor and the diode at a first stage, and to electrically isolate the transistor from the diode at a second stage.

    FUSE ELEMENTS AND SEMICONDUCTOR DEVICES
    3.
    发明公开

    公开(公告)号:US20230290819A1

    公开(公告)日:2023-09-14

    申请号:US17691264

    申请日:2022-03-10

    摘要: A fuse element, a semiconductor device, and a method for activating a backup unit are provided. The fuse element includes an active area, which includes a source region and a drain region beside the source region, a gate region disposed on the active area, and a shallow trench isolation (STI) structure surrounding the active area. In addition, the drain region includes a terminal configured to receive a stress voltage, such that a conductive path is established through the drain region to the source region.

    PROBE APPARATUS WITH A TRACK
    4.
    发明公开

    公开(公告)号:US20230288473A1

    公开(公告)日:2023-09-14

    申请号:US17690646

    申请日:2022-03-09

    IPC分类号: G01R31/28

    CPC分类号: G01R31/2887 G01R31/2891

    摘要: A probe apparatus includes a chuck configured to support a wafer, a track surrounding the chuck, a tester disposed on the track and having a probe. The tester is configured to move around the wafer along a circumferential direction. The probe apparatus also includes a processing unit in communication with the tester and configured to control a movement of the tester.

    METHOD FOR ACTIVATING BACKUP UNIT
    5.
    发明公开

    公开(公告)号:US20230290725A1

    公开(公告)日:2023-09-14

    申请号:US17691932

    申请日:2022-03-10

    IPC分类号: H01L23/525 H01L23/62

    CPC分类号: H01L23/5256 H01L23/62

    摘要: A method for activating a backup unit includes providing a fuse element connected to the backup unit. The fuse element includes an active area, which includes a source region and a drain region beside the source region, a gate region disposed on the active area, and a shallow trench isolation (STI) structure surrounding the active area. The method also includes applying a stress voltage on the drain region of the fuse element; accumulating electrons in a portion of the STI structure adjacent to the drain region; generating a conductive path through the drain region and the source region so that the fuse element is conductive; and activating the backup unit through the fuse element.