公开(公告)号：US11164862B2

公开(公告)日：2021-11-02

申请号：US16745798

申请日：2020-01-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Nicolas Normand ,  Stéphane Bouvier

IPC: H01L27/07 ,  H01L27/06 ,  H01L49/02 ,  H01L29/66 ,  H01L29/94

Abstract: An integrated resistor-capacitor (RC) structure (400) is disclosed. The integrated RC structure includes a vertical capacitor (302,402,306) and a resistive element (308,310) disposed above the capacitor. The integrated RC structure uses a low ohmic substrate (302) to ensure a good ground return path for the capacitor. Further, a resistivity of the substrate is configured such that a top plate (306) of the capacitor provides a reference ground above a predefined frequency. The impedance of the resistive element (308,310) is matched, relative to the reference ground, to a predetermined resistance. As such, the resistance of the resistive element (308,310) can be controlled to provide an impedance controlled RC structure over a range of operating frequencies.

公开(公告)号：US11978763B2

公开(公告)日：2024-05-07

申请号：US17551437

申请日：2021-12-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Stéphane Bouvier ,  Nicolas Normand ,  Emmanuel Lefeuvre

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/08 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L21/76816 ,  H01L23/5223 ,  H01L27/0805

Abstract: An electrical device that includes a substrate; a 3D capacitor including a capacitor dielectric region of a dielectric material, a capacitor electrode region of a conductive material, the capacitor dielectric region and the capacitor electrode region being arranged at least partially inside a cavity extending in the substrate from a top face of the substrate; and a surrounding through opening in the substrate and which surrounds a surrounded substrate region, the 3D capacitor being outside of the surrounded substrate region, the surrounding through opening extending from the top face to a bottom face of the substrate, wherein inside the surrounding through opening a surrounding dielectric region of the dielectric material and a surrounding conductive region of the conductive material are arranged.

公开(公告)号：US20200152625A1

公开(公告)日：2020-05-14

申请号：US16745798

申请日：2020-01-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Nicolas Normand ,  Stéphane Bouvier

IPC: H01L27/07 ,  H01L27/06 ,  H01L29/66 ,  H01L29/94 ,  H01L49/02

Abstract: An integrated resistor-capacitor (RC) structure (400) is disclosed. The integrated RC structure includes a vertical capacitor (302,402,306) and a resistive element (308,310) disposed above the capacitor. The integrated RC structure uses a low ohmic substrate (302) to ensure a good ground return path for the capacitor. Further, a resistivity of the substrate is configured such that a top plate (306) of the capacitor provides a reference ground above a predefined frequency. The impedance of the resistive element (308,310) is matched, relative to the reference ground, to a predetermined resistance. As such, the resistance of the resistive element (308,310) can be controlled to provide an impedance controlled RC structure over a range of operating frequencies.