- 专利标题: Electrical device comprising a 3D capacitor and a region surrounded by a through opening
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申请号: US17551437申请日: 2021-12-15
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公开(公告)号: US11978763B2公开(公告)日: 2024-05-07
- 发明人: Stéphane Bouvier , Nicolas Normand , Emmanuel Lefeuvre
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Nagaokakyo
- 专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Nagaokakyo
- 代理机构: Arentfox Shiff LLP
- 优先权: EP 306573 2020.12.15
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L27/08 ; H01L49/02
摘要:
An electrical device that includes a substrate; a 3D capacitor including a capacitor dielectric region of a dielectric material, a capacitor electrode region of a conductive material, the capacitor dielectric region and the capacitor electrode region being arranged at least partially inside a cavity extending in the substrate from a top face of the substrate; and a surrounding through opening in the substrate and which surrounds a surrounded substrate region, the 3D capacitor being outside of the surrounded substrate region, the surrounding through opening extending from the top face to a bottom face of the substrate, wherein inside the surrounding through opening a surrounding dielectric region of the dielectric material and a surrounding conductive region of the conductive material are arranged.
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