POWER SEMICONDUCTOR ELEMENT DRIVING CIRCUIT

    公开(公告)号:US20170141673A1

    公开(公告)日:2017-05-18

    申请号:US15322763

    申请日:2015-01-21

    IPC分类号: H02M1/08

    摘要: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

    POWER SWITCHING APPARATUS
    2.
    发明申请

    公开(公告)号:US20180375508A1

    公开(公告)日:2018-12-27

    申请号:US15747542

    申请日:2016-08-04

    IPC分类号: H03K17/16 H03K17/082

    摘要: A power switching apparatus includes a plurality of semiconductor switching devices connected in parallel with each other and a plurality of balance resistor units. The plurality of balance resistor units each have one end connected to a control electrode of an associated semiconductor switching device and the other end to which a common control signal is input. Each balance resistor unit is configured to have a resistance value switched between different values depending on whether the plurality of semiconductor switching devices are turned on or turned off in accordance with the control signal.