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公开(公告)号:US20170141673A1
公开(公告)日:2017-05-18
申请号:US15322763
申请日:2015-01-21
IPC分类号: H02M1/08
CPC分类号: H02M1/08 , H02M2001/0054 , H03K17/165 , Y02B70/1491
摘要: A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.
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公开(公告)号:US20180375508A1
公开(公告)日:2018-12-27
申请号:US15747542
申请日:2016-08-04
IPC分类号: H03K17/16 , H03K17/082
摘要: A power switching apparatus includes a plurality of semiconductor switching devices connected in parallel with each other and a plurality of balance resistor units. The plurality of balance resistor units each have one end connected to a control electrode of an associated semiconductor switching device and the other end to which a common control signal is input. Each balance resistor unit is configured to have a resistance value switched between different values depending on whether the plurality of semiconductor switching devices are turned on or turned off in accordance with the control signal.
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公开(公告)号:US20170288385A1
公开(公告)日:2017-10-05
申请号:US15505812
申请日:2014-09-11
发明人: Yoshitaka NAKA , Yasushi NAKAYAMA , Yoshiko TAMADA , Hiroyuki TAKAGI , Junichiro ISHIKAWA , Kazuhiro OTSU , Naohiko MITOMI
IPC分类号: H02H3/08 , H01L27/02 , H01L29/739
CPC分类号: H02H3/08 , H01L27/0292 , H01L29/7393 , H02M7/5387 , H03K17/0822
摘要: A short-circuit protection circuit for a self-arc-extinguishing type semiconductor element includes a first protection circuit and a second protection circuit. The first protection circuit is configured to reduce a voltage between a control electrode and a first main electrode of the self-arc-extinguishing type semiconductor element when detecting overcurrent flowing between the first main electrode and a second main electrode. The second protection circuit is configured to: detect current flowing in an interconnection adapted to supply the drive voltage; determine, based on the detected current, whether the first protection circuit is in an operating state; and change the drive voltage to turn off the self-arc-extinguishing type semiconductor element when the first protection circuit is in the operating state.
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