公开(公告)号：US20180348451A1

公开(公告)日：2018-12-06

申请号：US15570856

申请日：2016-04-07

Applicant: Mitsubishi Electric Corporation ,  Kyoto University ,  HAMAMATSU PHOTONICS K.K. ,  ROHM CO., LTD.

Inventor： Tatsuya YAMAMOTO ,  Kazuki KUBA ,  Masato KAWASAKI ,  Yoko INOUE ,  Tetsuo KOJIMA ,  Junichi NISHIMAE ,  Susumu NODA

IPC: G02B6/42 ,  H01S5/00 ,  H01S5/42 ,  H01S5/022 ,  H01S5/10 ,  H01S5/18

CPC classification number: G02B6/42 ,  G02B6/4206 ,  G02B6/425 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/105 ,  H01S5/18 ,  H01S5/4012 ,  H01S5/42

Abstract: A laser module includes: a photonic crystal surface-emitting laser element; a collimating lens array for producing a parallel optical beam; a condenser lens for condensing the optical beam; and an optical fiber which receives the optical beam on one end and transmits the optical beam to the outside. In the collimating lens array, an aperture portion corresponding to a collimating lens allows passage of the optical beam with an energy of not less than 94.0% and not more than 99.5% with respect to 100% of the energy of the optical beam incident on the collimating lens array.

公开(公告)号：US20180175590A1

公开(公告)日：2018-06-21

申请号：US15579780

申请日：2015-12-25

Applicant: Mitsubishi Electric Corporation

Inventor： Tatsuya YAMAMOTO ,  Daiji MORITA ,  Masato KAWASAKI ,  Kazuki KUBA ,  Junichi NISHIMAE ,  Tetsuo KOJIMA

IPC: H01S5/14 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40 ,  H01S5/22

CPC classification number: H01S5/146 ,  H01S3/08027 ,  H01S3/0805 ,  H01S5/0071 ,  H01S5/0078 ,  H01S5/02288 ,  H01S5/141 ,  H01S5/143 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4062 ,  H01S5/4068 ,  H01S5/4087

Abstract: A semiconductor laser device includes: a semiconductor laser bar to output a plurality of beams with different wavelengths from a continuous light-emitting region; a light-condensing optical system to condense the beams; a wavelength-dispersive optical element having a wavelength dispersing function; an optical filter in which a wavelength of a beam that passes therethrough differs periodically; an aperture located on an optical path of the beams superimposed on an identical axis; and a partially reflecting mirror. A totally reflecting mirror is formed on a back side of the semiconductor laser bar, and wavelengths of a plurality of beams with different wavelengths reflected by the totally reflecting mirror and output from the semiconductor laser bar are respectively identical to wavelengths of beams that pass through the optical filter.