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公开(公告)号：US20210082778A1
公开(公告)日：2021-03-18
申请号：US17046303
申请日：2018-12-06
发明人： Yusuke KAJI , Hisayuki TAKI , Seiki HIRAMATSU
IPC分类号： H01L23/049 , H01L23/31 , H01L23/373 , H01L23/00 , H01L25/07
摘要： A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.
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2.发明申请公开(公告)号：US20210391299A1
公开(公告)日：2021-12-16
申请号：US17283545
申请日：2018-12-27
发明人： Yusuke KAJI , Seiki HIRAMATSU
IPC分类号： H01L23/00 , H01L25/00 , H01L25/065 , H02M7/5387
摘要： The semiconductor device includes: an insulating substrate having metal layers provided at a front surface and a back surface; a semiconductor element having a lower surface joined onto the metal layer on a front surface side, and having an electrode on an upper surface; a base plate; a case member; a terminal member; a wiring member that connects the terminal member and the semiconductor element; a metal thin film member that continuously covers a surface of the terminal member and a surface of the electrode connected by the wiring member, and a surface of the wiring member; and a filling member that covers a surface of the metal thin film member and the insulating substrate exposed from the metal thin film member, and is filled in a region surrounded by the base plate and the case member.
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公开(公告)号：US20230024580A1
公开(公告)日：2023-01-26
申请号：US17781713
申请日：2020-02-06
发明人： Ken SAKAMOTO , Haruko HITOMI , Kozo HARADA , Seiki HIRAMATSU
IPC分类号： H01L23/31 , H01L25/065 , H01L25/18 , H01L23/00 , H02M7/5387
摘要： A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.
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公开(公告)号：US20200335411A1
公开(公告)日：2020-10-22
申请号：US16960756
申请日：2018-12-03
IPC分类号： H01L23/31 , H01L23/495 , H01L23/498 , H01L25/07 , H01L25/18 , H01L23/00 , H02M7/5387
摘要： A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.
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