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1.发明申请公开(公告)号：US20220254834A1
公开(公告)日：2022-08-11
申请号：US17171622
申请日：2021-02-09
Applicant: Micron Technology, Inc.
Inventor： David A. Daycock , Jonghun Kim
Abstract: A method of forming an electronic device comprises forming a stack structure comprising vertically alternating insulative structures and additional insulative structures, and forming pillars comprising a channel material and at least one dielectric material vertically extending through the stack structure. The method comprises removing the additional insulative structures to form cell openings, forming a first conductive material within a portion of the cell openings, and forming a fill material adjacent to the first conductive material and within the cell openings. The fill material comprises sacrificial portions. The method comprises removing the sacrificial portions of the fill material, and forming a second conductive material within the cell openings in locations previously occupied by the sacrificial portions of the fill material. Related electronic devices, memory devices, and systems are also described.
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公开(公告)号：US11744086B2
公开(公告)日：2023-08-29
申请号：US17171622
申请日：2021-02-09
Applicant: Micron Technology, Inc.
Inventor： David A. Daycock , Jonghun Kim
CPC classification number: H10B63/84 , H10N70/023 , H10N70/026 , H10N70/8265 , H10N70/881
Abstract: A method of forming an electronic device comprises forming a stack structure comprising vertically alternating insulative structures and additional insulative structures, and forming pillars comprising a channel material and at least one dielectric material vertically extending through the stack structure. The method comprises removing the additional insulative structures to form cell openings, forming a first conductive material within a portion of the cell openings, and forming a fill material adjacent to the first conductive material and within the cell openings. The fill material comprises sacrificial portions. The method comprises removing the sacrificial portions of the fill material, and forming a second conductive material within the cell openings in locations previously occupied by the sacrificial portions of the fill material. Related electronic devices, memory devices, and systems are also described.
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公开(公告)号：US20230380193A1
公开(公告)日：2023-11-23
申请号：US18365850
申请日：2023-08-04
Applicant: Micron Technology, Inc.
Inventor： David A. Daycock , Jonghun Kim
CPC classification number: H10B63/84 , H10N70/023 , H10N70/026 , H10N70/881 , H10N70/8265
Abstract: A method of forming an electronic device comprises forming a stack structure comprising vertically alternating insulative structures and additional insulative structures, and forming pillars comprising a channel material and at least one dielectric material vertically extending through the stack structure. The method comprises removing the additional insulative structures to form cell openings, forming a first conductive material within a portion of the cell openings, and forming a fill material adjacent to the first conductive material and within the cell openings. The fill material comprises sacrificial portions. The method comprises removing the sacrificial portions of the fill material, and forming a second conductive material within the cell openings in locations previously occupied by the sacrificial portions of the fill material. Related electronic devices, memory devices, and systems are also described.
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