MOISTURE RESISTANT SEMICONDUTOR DEVICE

    公开(公告)号:US20250140713A1

    公开(公告)日:2025-05-01

    申请号:US18673383

    申请日:2024-05-24

    Abstract: A moisture resistant semiconductor device may include a substrate and a plurality of terminations in the substrate of the semiconductor device, wherein the plurality of terminations are laterally adjacent to an active region of the semiconductor device. A first insulating layer which overlays the plurality of terminations and the substrate. A trench into the substrate located laterally beyond an edge of the plurality of terminations. A contact layer which overlays the first insulating layer. A second insulating layer which overlays the contact layer. The second insulating layer which overlays the trench. A third insulating layer which overlays the second insulating layer.

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