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    Ozone Treatment for Selective Silicon Nitride Etch Over Silicon
    2.
    发明申请
    Ozone Treatment for Selective Silicon Nitride Etch Over Silicon 审中-公开

    公开(公告)号：US20200234969A1

    公开(公告)日：2020-07-23

    申请号：US16744403

    申请日：2020-01-16

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

    Inventor： Shanyu Wang ,  Ting Xie ,  Chun Yan ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

    IPC: H01L21/311 ,  H01J37/32

    Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

    Integration of materials removal and surface treatment in semiconductor device fabrication
    3.
    发明授权
    Integration of materials removal and surface treatment in semiconductor device fabrication 有权

    公开(公告)号：US10403492B1

    公开(公告)日：2019-09-03

    申请号：US16216006

    申请日：2018-12-11

    Applicant: Mattson Technology, Inc.

    Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/285

    Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

    Ozone treatment for selective silicon nitride etch over silicon
    9.
    发明授权
    Ozone treatment for selective silicon nitride etch over silicon 有权

    公开(公告)号：US11043393B2

    公开(公告)日：2021-06-22

    申请号：US16744403

    申请日：2020-01-16

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

    Inventor： Shanyu Wang ,  Ting Xie ,  Chun Yan ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

    IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

    Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

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