公开(公告)号：US11791166B2

公开(公告)日：2023-10-17

申请号：US17532143

申请日：2021-11-22

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US11626269B2

公开(公告)日：2023-04-11

申请号：US17201081

申请日：2021-03-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

公开(公告)号：US11462413B2

公开(公告)日：2022-10-04

申请号：US16930392

申请日：2020-07-16

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shanyu Wang ,  Chun Yan ,  Hua Chung ,  Michael X. Yang ,  Tsai Wen Sung ,  Qi Zhang

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

公开(公告)号：US20220084839A1

公开(公告)日：2022-03-17

申请号：US17532143

申请日：2021-11-22

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US11183397B2

公开(公告)日：2021-11-23

申请号：US17071293

申请日：2020-10-15

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Qi Zhang ,  Haichun Yang ,  Hua Chung ,  Ting Xie ,  Michael X. Yang

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

公开(公告)号：US20210066088A1

公开(公告)日：2021-03-04

申请号：US16904669

申请日：2020-06-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

IPC: H01L21/311 ,  H01L21/02

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

公开(公告)号：US20220059321A1

公开(公告)日：2022-02-24

申请号：US17516065

申请日：2021-11-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

公开(公告)号：US11164725B2

公开(公告)日：2021-11-02

申请号：US16420542

申请日：2019-05-23

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/22 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02 ,  H01J37/32

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

公开(公告)号：US20210020445A1

公开(公告)日：2021-01-21

申请号：US16930392

申请日：2020-07-16

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shanyu Wang ,  Chun Yan ,  Hua Chung ,  Michael X. Yang ,  Tsai Wen Sung ,  Qi Zhang

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02

Abstract: Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

公开(公告)号：US11257680B2

公开(公告)日：2022-02-22

申请号：US17001728

申请日：2020-08-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu

IPC: H01L21/3065 ,  H01J37/32 ,  G03F7/42

Abstract: Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.