公开(公告)号：US20040217799A1

公开(公告)日：2004-11-04

申请号：US10836202

申请日：2004-05-03

申请人： Matsushita Elec. Ind. Co. Ltd.

发明人： Takashi Ichihara

IPC分类号： H03L007/00

CPC分类号： G09G3/3674 ,  G09G2310/0289 ,  G09G2330/02

摘要： A semiconductor circuit device, in which an output device is driven by inputting a direct current voltage source having a predetermined potential difference on the high potential side relative to a system ground and a power supply having a potential varied with time relative to the system ground. The semiconductor circuit device includes a voltage conversion circuit which converts an input signal having an amplitude between the system ground and the direct current voltage source into a converted signal having an amplitude between an internal ground and an internal power supply, and outputs the converted signal. The internal ground is controlled to have a potential varied with time relative to the system ground, and the internal power supply is controlled to change according to a change of the internal ground and have the predetermined potential difference on the high potential side when the internal ground has a fixed potential. A selector circuit selects and outputs the input signal and the converted signal according to the potential of the internal ground.

摘要翻译： 一种半导体电路装置，其中输出装置通过在相对于系统地的高电位侧输入具有预定电位差的直流电压源和具有随时间相对于系统接地而变化的电力来驱动。 半导体电路装置包括电压转换电路，其将具有系统地与直流电压源之间的振幅的输入信号转换成具有内部地与内部电源之间的振幅的转换信号，并输出转换后的信号。 内部接地被控制为具有相对于系统接地的时间变化的电位，并且内部电源被控制以根据内部接地的变化而变化，并且当内部接地处于高电位侧时具有预定的电位差 具有固定的潜力。 选择器电路根据内部地的电位来选择输出输入信号和转换信号。