Compliant lead structures for microelectronic devices
    7.
    发明授权
    Compliant lead structures for microelectronic devices 有权
    符合微电子器件的引线结构

    公开(公告)号:US06215191B1

    公开(公告)日:2001-04-10

    申请号:US09281460

    申请日:1999-03-30

    IPC分类号: H01L2348

    摘要: A method of treating a lead in a chip package. A conductive lead is positioned such that it extends across a gap in a dielectric substrate and is secured at either end to a first surface of the substrate. Directed energy is then applied to a desired portion of the surface of the lead within the gap. As a result of the application of energy, a surface layer of the lead is recrystallized thereby creating a fine grain, dense surface layer of lead material. Surface contaminates may be vaporized and contaminants at the grain boundaries of the recrystallized surface layers may be driven away from the grain boundaries such that a treated lead is more ductile and has better resistance to thermal cycling after the lead has been attached to a chip contact.

    摘要翻译: 一种处理芯片封装中的引线的方法。 导电引线定位成使得其延伸穿过电介质基板中的间隙,并且在任一端固定到基板的第一表面。 然后将定向能量施加到间隙内的引线表面的期望部分。 作为施加能量的结果,铅的表面层被再结晶,从而形成细晶粒,致密的铅材料表面层。 表面污染物可能被蒸发,并且再结晶表面层的晶界处的污染物可能被驱离离开晶界,使得处理的引线更具延展性,并且在引线已经附着到芯片接触之后具有更好的耐热循环性。