公开(公告)号：US11825758B2

公开(公告)日：2023-11-21

申请号：US16797391

申请日：2020-02-21

申请人： Massachusetts Institute of Technology

发明人： Jennifer Rupp ,  Juan Carlos Gonzalez Rosillo

IPC分类号： H10N70/00 ,  C01G23/00 ,  H10N70/20

CPC分类号： H10N70/8836 ,  C01G23/005 ,  H10N70/235 ,  H10N70/253 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2006/40

摘要： Resistive switching devices that contain lithium, including resistive switching devices containing a lithium titanate, and associated systems and methods are generally described. In some cases, the resistive switching device contains a lithium titanate-containing domain, a first electrode, and a second electrode. In some cases, the application of an electrical potential to the resistive switching device causes a change in resistance state of the lithium titanate-containing domain. The resistive switching devices described herein may be useful as memristors, and in applications that include Resistive-random access memory and neuromorphic computing.

公开(公告)号：US20200274065A1

公开(公告)日：2020-08-27

申请号：US16797391

申请日：2020-02-21

申请人： Massachusetts Institute of Technology

发明人： Jennifer Rupp ,  Juan Carlos Gonzalez Rosillo

IPC分类号： H01L45/00 ,  C01G23/00

摘要： Resistive switching devices that contain lithium, including resistive switching devices containing a lithium titanate, and associated systems and methods are generally described. In some cases, the resistive switching device contains a lithium titanate-containing domain, a first electrode, and a second electrode. In some cases, the application of an electrical potential to the resistive switching device causes a change in resistance state of the lithium titanate-containing domain. The resistive switching devices described herein may be useful as memristors, and in applications that include Resistive-random access memory and neuromorphic computing.