知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

26 records (took 0.022 seconds)

    System for reducing wafer contamination using freshly, conditioned alkaline etching solution
    1.
    发明授权
    System for reducing wafer contamination using freshly, conditioned alkaline etching solution 有权
    使用新鲜条件碱性蚀刻溶液减少晶圆污染的系统

    公开(公告)号：US06503363B2

    公开(公告)日：2003-01-07

    申请号：US09518502

    申请日：2000-03-03

    Applicant: Masami Nakano ,  Michito Sato ,  Brian D. West

    Inventor： Masami Nakano ,  Michito Sato ,  Brian D. West

    IPC: H01L2100

    CPC classification number: H01L21/67086 ,  Y10T137/86187

    Abstract: A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.

    Abstract translation: 一种用于调节碱蚀刻溶液以减少硅晶片蚀刻工艺中的污染的系统。 该系统包括用于混合调节的碱性蚀刻溶液的调理槽，包括调理化学品的经调理的碱性蚀刻溶液; 配置成将调理化学品添加到调理罐的调理化学品引入系统; 以及缓冲罐，用于在蚀刻工艺中使用经调理的碱性蚀刻溶液之前存储经调理的碱性蚀刻溶液。

    Manufacturing Method of Electric Motor
    2.
    发明申请
    Manufacturing Method of Electric Motor 有权
    电机制造方法

    公开(公告)号：US20090056104A1

    公开(公告)日：2009-03-05

    申请号：US12043882

    申请日：2008-03-06

    Applicant: Hiroyuki Muto ,  Masami Nakano

    Inventor： Hiroyuki Muto ,  Masami Nakano

    IPC: H02K15/00

    CPC classification number: H02K15/0062 ,  B23K9/0026 ,  B23K9/0035 ,  B23K2101/38 ,  H01R43/0214 ,  H01R43/0249 ,  H02K5/225 ,  H02K11/225 ,  Y10T29/49009

    Abstract: In a manufacturing method of an electric motor, at a time of in-sequence arc welding each of one end of a plurality of lined-up connector terminals to each of a plurality of lined-up detection signal output terminals by a welding rod provided in a torch of an arc welding machine, the method connects each of the other ends corresponding to the respective one end of a plurality of connector terminals to each of earth terminals of the arc welding machine in sequence.

    Abstract translation: 在电动机的制造方法中，在多个排列连接器端子的一端通过设置在多个排列检测信号输出端子中的焊杆进行按顺序电弧焊接 电弧焊机的焊炬，该方法将与多个连接器端子的相应一端对应的另一端连接到电弧焊机的每个接地端子。

    Electromagnetic brake
    4.
    发明授权
    Electromagnetic brake 失效
    电磁制动器

    公开(公告)号：US06659238B2

    公开(公告)日：2003-12-09

    申请号：US10093908

    申请日：2002-03-08

    Applicant: Makoto Saito ,  Masami Nakano

    Inventor： Makoto Saito ,  Masami Nakano

    IPC: F16D6300

    CPC classification number: F16D57/002 ,  H02K7/1025

    Abstract: The present invention relates to an electromagnetic brake. In an electromagnetic brake (11) comprising an electromagnetic brake body (13) having yoke members (15a and 15b) with a coil winding (14) and a brake movable member (16) formed of a magnetic material, which is disposed via an air gap (18) in a magnetic path formed by the electromagnetic brake body (13) and is fixed to a motor rotating shaft (2b), a magnetic fluid (20)is filled in the air gap (18), and a sealing member (19) for rotatably sealing the motor rotating shaft (2b) is disposed between the electromagnetic brake body (13) and the motor rotating shaft (2b) to prevent the magnetic fluid (20) from leaking, whereby the electromagnetic brake (11)is applied when the coil winding (14) is excited.

    Abstract translation: 本发明涉及一种电磁制动器。 在具有电磁制动器体（13）的电磁制动器（11）中，所述电磁制动体（13）具有带有线圈绕组（14）的轭构件（15a，15b）和由磁性材料形成的制动器可动构件（16） 在由电磁制动器主体（13）形成的磁路中的间隙（18）固定在电机转轴（2b）上，磁性流体（20）填充在气隙（18）中，密封部件 设置在电磁制动体（13）与电动机转动轴（2b）之间，用于可旋转地密封电动机转动轴（2b）的电动机旋转轴（19），以防止磁性液体（20）泄漏，由此施加电磁制动器 当线圈绕组（14）被激发时。

    Method of cleaning silicon wafers in cleaning baths with controlled vertical surface oscillations and controlled in/out speeds
    5.
    发明授权
    Method of cleaning silicon wafers in cleaning baths with controlled vertical surface oscillations and controlled in/out speeds 失效
    在具有受控垂直表面振荡和受控进/出速度的清洗浴中清洁硅晶片的方法

    公开(公告)号：US5662743A

    公开(公告)日：1997-09-02

    申请号：US439560

    申请日：1995-05-11

    Applicant: Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

    Inventor： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

    IPC: C11D7/08 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  C23G1/02

    CPC classification number: H01L21/02052

    Abstract: A novel HF cleaning method of silicon wafers is provided whereby the wafers are cleaned with a lowered level of particle contamination on the surface thereof. In the method silicon wafers are immersed in a HF bath, followed by immersion in a deionized water bath. The silicon wafers are lowered into and lifted out of each bath along a direction which is substantially vertical with respect to a surface of each bath at a rate of from 1 mm/sec to 50 mm/sec. During immersion, a vertical oscillation of the surface of each bath is maintained in the range of less than 4 mm.

    Abstract translation: 提供一种硅晶片的新型HF清洗方法，由此在其表面上以较低的颗粒污染水平清洗晶片。 在该方法中，将硅晶片浸入HF浴中，然后浸入去离子水浴中。 硅晶片沿着相对于每个浴槽的表面基本上垂直的方向以1mm / sec至50mm / sec的速率下降到每个浴中并从每个浴中升出。 在浸入过程中，每个槽的表面的垂直振荡保持在小于4mm的范围内。

    Method of making semiconductor wafers
    7.
    发明授权
    Method of making semiconductor wafers 失效
    制造半导体晶圆的方法

    公开(公告)号：US5494862A

    公开(公告)日：1996-02-27

    申请号：US250503

    申请日：1994-05-27

    Applicant: Tadahiro Kato ,  Masami Nakano ,  Sunao Shima ,  Hisashi Masumura

    Inventor： Tadahiro Kato ,  Masami Nakano ,  Sunao Shima ,  Hisashi Masumura

    IPC: H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/463

    CPC classification number: H01L21/02008 ,  H01L21/306 ,  Y10S438/906 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/974 ,  Y10S438/977

    Abstract: A method for a flatter semiconductor wafer free of ORP-observed irregularity and particles generated in handling on the back side of the wafer, in which an alkaline etching is adopted to utilize its advantage and a slight polishing step is combined to a conventional method of this kind. A deficiency of alkaline etching which brings about rougher surface irregularities on the surface of a wafer is eliminated by the use of the step of slight polishing on the back surface after the etching step and the inherent advantage stands without a loss, so that particle generation from the back surface of a semiconductor wafer in handling is much reduced and what's more a flatter semiconductor wafer is realized and a yield of an electronic device fabrication is increased.

    Abstract translation: 在采用碱蚀刻以利用其优点和轻微的研磨步骤的方法中，在晶片的背面处理不产生ORP观察到的不规则性和颗粒产生的平坦的半导体晶片的方法与传统的方法相结合 类。 通过在蚀刻步骤之后通过使用在背面上的轻微抛光的步骤来消除在晶片表面上产生更粗糙的表面不规则性的碱性蚀刻的缺陷，并且固有优点无损耗地产生，从而 处理中的半导体晶片的背面被大大减少，并且实现了更平坦的半导体晶片，并且增加了电子器件制造的成品率。

    Method for electric motor terminal welding isolation
    9.
    发明授权
    Method for electric motor terminal welding isolation 有权
    电动机端子焊接隔离方法

    公开(公告)号：US07546673B2

    公开(公告)日：2009-06-16

    申请号：US12043882

    申请日：2008-03-06

    Applicant: Hiroyuki Muto ,  Masami Nakano

    Inventor： Hiroyuki Muto ,  Masami Nakano

    IPC: H02K15/00

    CPC classification number: H02K15/0062 ,  B23K9/0026 ,  B23K9/0035 ,  B23K2101/38 ,  H01R43/0214 ,  H01R43/0249 ,  H02K5/225 ,  H02K11/225 ,  Y10T29/49009

    Abstract: In a manufacturing method of an electric motor, at a time of in-sequence arc welding each of one end of a plurality of lined-up connector terminals to each of a plurality of lined-up detection signal output terminals by a welding rod provided in a torch of an arc welding machine, the method connects each of the other ends corresponding to the respective one end of a plurality of connector terminals to each of earth terminals of the arc welding machine in sequence.

    Abstract translation: 在电动机的制造方法中，在多个排列连接器端子的一端通过设置在多个排列检测信号输出端子中的焊杆进行按顺序电弧焊接 电弧焊机的焊炬，该方法将与多个连接器端子的相应一端对应的另一端连接到电弧焊机的每个接地端子。

    Method of purifying alkaline solution and method of etching semiconductor wafers
    10.
    发明授权
    Method of purifying alkaline solution and method of etching semiconductor wafers 失效
    碱性溶液的净化方法及蚀刻半导体晶片的方法

    公开(公告)号：US6110839A

    公开(公告)日：2000-08-29

    申请号：US703645

    申请日：1996-08-27

    Applicant: Masami Nakano ,  Isao Uchiyama ,  Toshio Ajito ,  Hideo Kudo

    Inventor： Masami Nakano ,  Isao Uchiyama ,  Toshio Ajito ,  Hideo Kudo

    IPC: C01D1/28 ,  C30B29/06 ,  C30B33/10 ,  H01L21/308 ,  B44C1/22

    CPC classification number: C01D1/28

    Abstract: A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.

    Abstract translation: 纯化碱性溶液的方法包括在金属硅和/或硅化合物溶解时产生的反应产物将金属硅和/或硅化合物溶解在碱性溶液中，并在碱性溶液中溶解非电离金属离子。 该纯化方法能够通过简单的操作以低成本显着降低碱性溶液中的金属离子。 蚀刻半导体晶片的方法包括通过在碱性溶液中非离子化金属离子来纯化碱性溶液，并通过使用纯化的碱性溶液蚀刻半导体晶片。 根据该蚀刻方法，由于半导体晶片的蚀刻而导致的金属污染程度大大降低，晶片质量不会降低，也不会降低半导体器件的特性。

Patent Agency Ranking