发明授权
- 专利标题: System for reducing wafer contamination using freshly, conditioned alkaline etching solution
- 专利标题(中): 使用新鲜条件碱性蚀刻溶液减少晶圆污染的系统
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申请号: US09518502申请日: 2000-03-03
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公开(公告)号: US06503363B2公开(公告)日: 2003-01-07
- 发明人: Masami Nakano , Michito Sato , Brian D. West
- 申请人: Masami Nakano , Michito Sato , Brian D. West
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.
公开/授权文献
- US20020053402A1 System for reducing wafer contamination 公开/授权日:2002-05-09
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