发明授权
US06503363B2 System for reducing wafer contamination using freshly, conditioned alkaline etching solution 有权
使用新鲜条件碱性蚀刻溶液减少晶圆污染的系统

  • 专利标题: System for reducing wafer contamination using freshly, conditioned alkaline etching solution
  • 专利标题(中): 使用新鲜条件碱性蚀刻溶液减少晶圆污染的系统
  • 申请号: US09518502
    申请日: 2000-03-03
  • 公开(公告)号: US06503363B2
    公开(公告)日: 2003-01-07
  • 发明人: Masami NakanoMichito SatoBrian D. West
  • 申请人: Masami NakanoMichito SatoBrian D. West
  • 主分类号: H01L2100
  • IPC分类号: H01L2100
System for reducing wafer contamination using freshly, conditioned alkaline etching solution
摘要:
A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.
公开/授权文献
信息查询
0/0