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1.发明授权公开(公告)号：US07820542B2
公开(公告)日：2010-10-26
申请号：US12659149
申请日：2010-02-26
IPC分类号： H01L21/3205
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。
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公开(公告)号：US20100159626A1
公开(公告)日：2010-06-24
申请号：US12659149
申请日：2010-02-26
IPC分类号： H01L21/20
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
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公开(公告)号：US07701994B2
公开(公告)日：2010-04-20
申请号：US11311138
申请日：2005-12-20
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
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4.发明申请公开(公告)号：US20110007770A1
公开(公告)日：2011-01-13
申请号：US12923334
申请日：2010-09-15
IPC分类号： H01S5/323
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。
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5.发明授权公开(公告)号：US08129732B2
公开(公告)日：2012-03-06
申请号：US12923334
申请日：2010-09-15
IPC分类号： H01L29/18
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。
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6.发明申请公开(公告)号：US20060133442A1
公开(公告)日：2006-06-22
申请号：US11311138
申请日：2005-12-20
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译： 在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。 以这种方式，获得其中将小面涂层铺设在粘合层上的结构。
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7.发明授权公开(公告)号：US08368095B2
公开(公告)日：2013-02-05
申请号：US11638582
申请日：2006-12-14
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/44 , H01S5/028 , H01S5/2036 , H01S5/22
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
摘要翻译： 提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。
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8.发明申请Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件公开(公告)号：US20120015465A1
公开(公告)日：2012-01-19
申请号：US13200357
申请日：2011-09-23
IPC分类号： H01L33/26
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
摘要翻译： 本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。
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9.发明授权Nitride semiconductor laser element and external-cavity semiconductor laser device 有权氮化物半导体激光元件和外腔半导体激光器件公开(公告)号：US07970035B2
公开(公告)日：2011-06-28
申请号：US12406533
申请日：2009-03-18
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/141 , H01S5/2215 , H01S5/34333
摘要： Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.
摘要翻译： 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中，在发光部分上形成由氮氧化硅制成的涂膜，并且涂膜对从发光部分发射的激光的反射光的反射率为0.5％以下。
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公开(公告)号：US07940003B2
公开(公告)日：2011-05-10
申请号：US12155978
申请日：2008-06-12
IPC分类号： H05B33/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L2224/48091 , H01L2224/48247 , H01L2924/16152 , H01S5/0021 , H01S5/02212 , H01S5/02216 , H01S5/0282 , H01S5/0286 , H01S5/0287 , H01S5/0683 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/34333 , Y10S362/80 , H01L2924/00014
摘要： The present invention comprises a light absorption film 5 which is formed on the outermost surface of an end surface on the light emitting side of a chip used in a laser device, typically, a laser chip 1 and which absorbs part of the light emitted. By forming this light absorption film 5, the collection and accumulation of pollutants which are caused by reacting with light emitted are curbed.
摘要翻译： 本发明包括光吸收膜5，其形成在激光装置中使用的芯片的发光侧的端面的最外表面上，通常为激光芯片1，并且其吸收部分发光的光。 通过形成该光吸收膜5，抑制由与发出的光反应引起的污染物的收集和积聚。
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