Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
    7.
    发明授权
    Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号:US08368095B2

    公开(公告)日:2013-02-05

    申请号:US11638582

    申请日:2006-12-14

    IPC分类号: H01L33/00

    摘要: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

    摘要翻译: 提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件,该发光部分由氮化物半导体形成,与发光部分接触的涂膜由氮氧化物形成。 还提供了一种制造氮化物半导体激光器件的方法,该器件具有具有涂覆有涂膜的小面的空腔,包括以下步骤:提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。

    Nitride semiconductor laser element and external-cavity semiconductor laser device
    9.
    发明授权
    Nitride semiconductor laser element and external-cavity semiconductor laser device 有权
    氮化物半导体激光元件和外腔半导体激光器件

    公开(公告)号:US07970035B2

    公开(公告)日:2011-06-28

    申请号:US12406533

    申请日:2009-03-18

    IPC分类号: H01S5/00 H01S3/08

    摘要: Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.

    摘要翻译: 公开了包括由氮化物半导体制成的发光部分的氮化物半导体激光元件和使用它的外腔半导体激光器件。 在氮化物半导体激光元件中,在发光部分上形成由氮氧化硅制成的涂膜,并且涂膜对从发光部分发射的激光的反射光的反射率为0.5%以下。